| Allicdata Part #: | 2SB12190RLTR-ND |
| Manufacturer Part#: |
2SB12190RL |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS PNP 25V 0.5A SMINI 3P |
| More Detail: | Bipolar (BJT) Transistor PNP 25V 500mA 200MHz 150m... |
| DataSheet: |  2SB12190RL Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.08401 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 25V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 150mA, 10V |
| Power - Max: | 150mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SMini3-G1 |
| Base Part Number: | 2SB1219 |
Description
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2SB12190RL is a type of transistor – a semiconductor device used to amplify and switch electronic signals, typically in circuits controlling devices such as radios and televisions. Specifically, it is a single bipolar junction transistor (BJT), which is used in many different applications.
2SB12190RL has a number of different operational and design specifications that affect its performance. It has a PNP collector-to-emitter voltage rating of -30V, a maximum collector current of -0.15 A, a maximum collector power dissipation of 0.1 W, an operating temperature range from -65 to +150°C, and a DC current gain of 80 – 200.
These specifications make 2SB12190RL well-suited for a range of different application fields. In particular, this type of transistor is often used in control and signal processing circuits, such as LED drivers and amplifier stages, as well as in switching circuitry, often as part of an integrated circuit.
In order to understand how 2SB12190RL works, it is helpful to know a little bit about its basic structure and electrical characteristics. A bipolar junction transistor consists of three layers of semiconductor material sandwiched together. The two outer layers are known as the emitter and collector, while the middle layer or base connects them. The emitter and collector are connected to an external electric circuit, and the base is used to adjust current flow between the other two layers.
When a voltage is applied to the base and the collector, a current flows through the transistor between the collector and emitter. This current is amplified as it passes through the transistor, and this is how the transistor amplifies and switches signals.
2SB12190RL is well-suited for use in a range of different electrical and electronic applications. Its relatively low cost and high performance make it an ideal choice for those looking for a reliable and cost-effective solution for controlling and switching low-power signals.
The specific data is subject to PDF, and the above content is for reference
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