2SB1219GSL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 30mA, 300mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	170 @ 150mA, 10V
Power - Max:	150mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-85
Supplier Device Package:	SMini3-F2
Base Part Number:	2SB1219

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Introduction

The 2SB1219GSL is a NPN Bipolar Junction Transistor, in a single package, designed specifically for general purpose applications such as switching, amplifier and driver stages. This transistor is composed of three terminals, namely the collector, emitter and base. It is commonly used in many different circuit topologies, depending on the application requirements. The 2SB1219GSL has low power dissipation and low collector-emitter saturation voltage.

Description

The 2SB1219GSL is suitable for use in the switching and amplifier stages. It is comprised of an N-type semiconductor layer, formed by adding an N-type dopant to a semiconductor material, and a P-type semiconductor layer, formed by adding a P-type dopant to the same material. The two layers form the two junctions called the Emitter-Base junction and the Base-Collector junction. The current carriers can flow through the transistor due to the modulation of the voltage applied to the base junction.The general-purpose BJT features a maximum collector current of 800mA, a maximum collector-emitter voltage of 30V and a maximum collector-base voltage of 40V. It also has a maximum power dissipation of 500mW and a collector-emitter saturation voltage of 250mV.

Working Principle

The bipolar junction transistor (BJT) works on the principle of two p-n junctions placed back to back. The current carriers, i.e. holes and electrons, are made to pass through the transistor due to the application of base voltage. The emitter junction is forward biased and the collector junction is reverse biased.The holes and electrons combine at the emitter junction and the excess electrons move towards the base. Some of these electrons are injected into the base region and are collected by the collector junction. This process causes a current to flow through the transistor. The current gain, also known as current amplification factor, can be controlled by controlling the current flowing through the base, known as biasing.

Applications

The 2SB1219GSL can be used in variety of applications, with switching, amplifier and driver stages as the most common.The 2SB1219GSL can be used in audio amplifiers and audio pre-amplifiers as an amplifier stage. It can also be used in power switches, voltage regulators and voltage stabilizers. It can be used in control circuits and motor control circuits.The 2SB1219GSL can also be used in other applications such as relay drivers, current sensing, temperature sensing, opto isolation and protection circuits.

Conclusion

The 2SB1219GSL is a NPN Bipolar Junction Transistor, particularly suited for a variety of general purpose applications. It is excellent for use in amplifier, switching and driver stages and can be used in various control circuits. The 2SB1219GSL has low power dissipation and low collector-emitter saturation voltage, making it an ideal choice for various applications.

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