2SB12990P Allicdata Electronics
Allicdata Part #:

2SB12990P-ND

Manufacturer Part#:

2SB12990P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 60V 3A TO-220F
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 30MHz 2W Throu...
DataSheet: 2SB12990P datasheet2SB12990P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1
Description

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2SB12990P is a single-transistor type of bipolar junction transistor (BJT). It is a type of bipolar semiconductor device, which has three-layer terminals known as emitter, base and collector. These are used to control the flow of current between two terminals by varying the voltage or current level applied to the base.

This particular type of BJT is designed to operate in the dc (direct current) range. This means it is most suited for applications involving the control of direct current and static loads. Applications of the 2SB12990P can be found in the telecommunications, automotive electronics, amplifier circuits, motor and lighting controls, and power management.

This BJT operates using the principle of base-emitter junction current conduction. It uses the thermionic emission process to induce current flow from the emitter to the base, and also from the base to the collector. This process allows for a very efficient control of current flow between the two terminals, providing a great degree of control and high levels of stability. As the current flows between the two terminals, the voltage level is controlled by the Base-Emitter junction, resulting in a smooth and even current flow.

The 2SB12990P offers a high degree of performance with its ribbed emitter leads, lateral double emitter structure, high-temperature low resistance junction, and high-speed characteristics. This makes it ideal for applications where a high level of performance is essential. It also offers low noise and minimal losses, making it highly reliable and efficient.

The 2SB12990P is also designed to be used in a wide variety of applications. It can be used in power switching, amplifier circuits, motor and lighting controls, and power supply circuits. It is also highly suited for use in automotive electronics applications, providing a stable and efficient power source for a wide range of applications.

In conclusion, the 2SB12990P is a type of BJT that is highly suitable for applications involving the control of direct current and static loads. It offers a very high degree of performance, low noise and minimal losses, making it very reliable and efficient for a wide variety of applications. With its ribbed emitter leads, lateral double emitter structure, high-temperature low resistance junction, and high-speed characteristics, the 2SB12990P is a great choice for any application.

The specific data is subject to PDF, and the above content is for reference

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