2SB1302S-TD-E Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SB1302S-TD-E is a bipolar junction transistor (BJT) for use in audio, video and general-purpose applications. It is constructed in a transistor outline package and is composed of three terminals: collector, base, and emitter. This type of transistor is also known as an NPN transistor.

The primary purpose of a bipolar junction transistor is to amplify electric signals. A BJT device consists of two types of semiconductor materials: an emitter and a collector. Electric signals are generally supplied to the emitter terminal and these electric signals will be amplified and can then be applied to the collector terminal.

The 2SB1302S-TD-E has a collector-emitter breakdown voltage (BVceo) of -150V and a collector-base breakdown voltage (BVcbo) of -180V. It has a collector current capability (Ic) of -2A. The maximum power dissipation of 2SB1302S-TD-E is 40V, with a rated power dissipation of 2.5W. The maximum voltage gain (hFE) of this device is 15 at a collector current of -2A.

The 2SB1302S-TD-E has an emitter-base voltage (VEBO) of 6V, which allows the transistor to be driven by lower voltage signals. It also has an operating temperature range of -55 to +150C. This gives the transistor a wide range of application fields, such as audio and video amplifier, switching, and general-purpose circuits.

The working principle of the 2SB1302S-TD-E is based on the principle of bipolar junction transistors. When the transistor receives an electric signal at its input (emitter), it will produce an amplified output at its output (collector). As the base current increases, the collector current also increases. This is because the base and collector terminals are connected in the transistor. The amplified collector current is then used for various applications.

The 2SB1302S-TD-E is a versatile and reliable device that has a number of applications. It is used in audio and video amplifiers, switching circuits, communication systems, instrumentation amplifiers, and general-purpose circuits. The device is widely used in various electronic systems and devices such as TV and radio receivers, medical equipment, automotive systems, and consumer electronic products.

In conclusion, the 2SB1302S-TD-E is a bipolar junction transistor that is used in audio, video and general-purpose applications. It has a Collector-Emitter breakdown voltage (BVceo) of -150V and a Collector-Base breakdown voltage (BVcbo) of -180V and has a wide operating temperature range of -55 to +150C. This device has been used in many different applications and is a versatile and reliable device.

The specific data is subject to PDF, and the above content is for reference