2SB1321A0A Allicdata Electronics
Allicdata Part #:

2SB1321A0ATB-ND

Manufacturer Part#:

2SB1321A0A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.5A MT-1
More Detail: Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 600m...
DataSheet: 2SB1321A0A datasheet2SB1321A0A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 10mA, 10V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-1-A1
Base Part Number: 2SB1321
Description

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Introduction

2SB1321A0A transistors are Bipolar Junction Transistors (BJT) of the single type. It is a three terminal semiconductor device whose primary function is to amplify current. It can also be used as a switch or a voltage regulator. It\'s small size and high gain make it a great component for various applications such as communications, instrumentation, and consumer electronics.

Application Fields

2SB1321A0A transistors can be applied for various purposes, including radio frequency (RF) amplifiers and oscillators, signal modulation systems, pulse generators, current buffer applications, active filters and signal switch-mode power delivery systems. 2SB1321A0A transistors are also useful in digital audio systems and integrated circuits.

It can also be used to control current in signal processing devices and power supplies, providing regulated output. In addition, this type of transistor is often employed in rectifiers, solar cells, robotics, and even in medical science.

Working Principle

A transistor is composed of three terminals; emitter, collector and base. The emitter is what allows electrons to flow into the base of the transistor. The flow of electrons is regulated by the voltage placed by outside connections on the base and collector. The transistor’s gain is determined by the ratio of the resistor values at the base and collector terminals.

The voltage placed on the base affects the collector-emitter current to the extent that for a given amount of base current, the collector-emitter current changes exponentially. The transistor amplifies current or acts as a switch by using this base-emitter voltage dependency.

2SB1321A0A transistors have a high current gain and low collector-emitter saturation voltage. This makes it suitable for high-frequency switching applications. They are also well-suited to signal processing applications, as they can handle high signal-to-noise ratios and low noise generation.

Conclusion

2SB1321A0A transistors are versatile components that can be used in a variety of applications. These transistors are useful as either amplifiers or switches, as they have a high current gain and low collector-emitter saturation voltage. They are suitable for applications such as RF amplifiers and oscillators, signal modulation systems, and switch-mode power delivery systems.

The specific data is subject to PDF, and the above content is for reference

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