2SB1424T100R Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 100mA, 2V
Power - Max:	500mW
Frequency - Transition:	240MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	MPT3
Base Part Number:	2SB1424

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2SB1424T100R Application Field and Working Principle

Introduction

The 2SB1424T100R is a bipolar junction transistor (BJT) belonging to the NPN family of transistors. It is made from silicon and can be used to switch and amplify signals and power. 2SB1424T100R transistors are available in a variety of forms and are commonly used in a range of applications such as electronic switching, signal amplifiers, and power supplies.

Features

The 2SB1424T100R features a collector-base voltage of 100V, an emitter-base voltage of 5V and a collector current of 800mA. It is designed to be used in applications requiring high junction temperatures. The transistor is characterized by its fast switching speed, making it well suited for high frequency applications. It also features a wide bandwidth and high power dissipation, allowing for more efficient power management in applications. The 2SB1424T100R is available in a variety of package types, including SMT, DIP, and through-hole. The various package types are suitable for various applications, such as for reflow soldering for surface mount applications and for through-hole applications.

Applications

The 2SB1424T100R can be used in a variety of electronic applications, such as audio amplifiers, high speed switching, RF amplifiers, and power management. Because of its high switching speed and wide bandwidth, it is well suited for audio applications that require dynamic range and fidelity. It can also be used in RF amplifiers where high frequency performance is required. In addition, the junction temperature characteristics of the 2SB1424T100R make it suitable for power management applications such as DC-DC converters and flyback power supplies.

Working Principle

The 2SB1424T100R is a silicon-based bipolar junction transistor (BJT). BJT transistors are three-terminal devices that can switch and amplify signals and power. They are composed of three layers of semiconductor material, with each layer having a different dopant. The layers are arranged in a sandwich-like structure, with the emitter layer closest to the base, the collector layer further away from the base and the base layer between them.A small current applied to the base of the transistor controls the current flowing between the emitter and collector. When the base voltage is increased, a larger current flows between the emitter and the collector. This amplification is known as the "gain" of the transistor. The gain is determined by the doping of the base layer, the size of the base layer, and the current flowing through it.The 2SB1424T100R has a high switching speed and can be used for high-frequency applications such as RF amplifiers. It also has a wide bandwidth and can handle high voltage and current. Its high switching speed and wide bandwidth make it suitable for a variety of amplifiers and signal switching applications.The junction temperature of the 2SB1424T100R is suitable for applications requiring high junction temperature and power management. It is also suitable for high frequency and high power applications. The transistor is available in several package types and is suitable for various applications, such as for reflow soldering for surface mount applications and for through-hole applications.

Conclusion

The 2SB1424T100R is a bipolar junction transistor (BJT) belonging to the NPN family of transistors. It is made from silicon and can be used to switch and amplify signals and power. The 2SB1424T100R features a collector-base voltage of 100V, an emitter-base voltage of 5V, and a collector current of 800mA. It is also characterized by its fast switching speed, wide bandwidth and high power dissipation.The 2SB1424T100R can be used in a variety of electronic applications, such as audio amplifiers, high speed switching, RF amplifiers, and power management. It works by controlling the current flowing between the emitter and collector. The gain of the transistor is determined by the doping of the base layer, the size of the base layer, and the current flowing through it. The 2SB1424T100R is available in a variety of package types, and its high switching speed, wide bandwidth and compatibility with high junction temperatures make it suitable for a range of applications.

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