2SB1427T100E Datasheet/PDFThe 2SB1427T100E is a PNP transistor specifically designed for high-speed switching and amplifier applications. It is manufactured with a low collector-emitter saturation voltage to reduce cross conduction time, thus increasing device reliability and performance. This device is part of the Single Bipolar (BJT) Transistors category.
2SB1427T100E Application Field and Working Principle
The 2SB1427T100E is designed for high-speed switching and small signal amplifier applications. It is suitable for use in a variety of applications, including automotive, communications, industrial, medical, and consumer electronics.
The 2SB1427T100E is a PNP transistor composed of two semiconductor layers, source and drain. An emitter is formed at the intersection of the source and drain layers, while the collector is formed on the outside of the source layer. When the current flows through the transistor, the collector and emitter regions act as rectifying junctions. The voltage applied to the base (the third connection) of the transistor controls the flow of current and voltage gain of the transistor.
The principle of operation for the 2SB1427T100E is based on the ability of a small current flowing through the base to control a relatively large current flowing between the collector and the emitter. When the base receives a positive voltage, it creates a conductive channel between the collector and the emitter, allowing current to flow from the collector to the emitter, thus creating an amplification effect. When the voltage on the base is reversed, this conductive channel is reversed, blocking current flow between the collector and the emitter.
2SB1427T100E Performance Characteristics
The 2SB1427T100E has a collector-emitter saturation voltage (VCE(sat)) of -730 mV, a current gain hFE of 430, a collector-emitter breakdown voltage (BVceo) of -100 V and a reverse base-emitter breakdown voltage (Brbeo) of -7V. It has a DC current gain bandwidth product fT of 300 MHz and an operating temperature range of -55 to + 125 °C. It is rated for an average power dissipation of 1.0W.
The 2SB1427T100E features a high input impedance and a low output impedance, making it an ideal choice for high-speed switching applications. It also features a low noise and low distortion, making it suitable for use in audio and other low noise applications. The high hFE value of the 2SB1427T100E allows for a more precise current control and performance.
2SB1427T100E Safety Ratings
The 2SB1427T100E is a high voltage transistor and must be used according to the ratings specified by the manufacturer. Failure to use the device according to the rated specifications can result in damage to the device or other safety hazards. It is therefore crucial that proper safety precautions are taken when handling and using this device, including the use of the appropriate safety equipment and protective clothing. The 2SB1427T100E is rated up to 500 V DC.
Conclusion
In conclusion, the 2SB1427T100E is a PNP transistor designed for high-speed switching and amplifier applications. It has a low collector-emitter saturation voltage, a high current gain bandwidth product, and a low noise and distortion rating. It is rated for up to 500 V DC and should be used according to the specified safety precautions. The 2SB1427T100E is part of the Single Bipolar (BJT) Transistors category.