Allicdata Part #: | 2SB1590KT146QTR-ND |
Manufacturer Part#: |
2SB1590KT146Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 15V 1A SOT346 |
More Detail: | Bipolar (BJT) Transistor PNP 15V 1A 200MHz 200mW S... |
DataSheet: | 2SB1590KT146Q Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 20mA, 400mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | 2SB1590 |
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:2SB1590KT146Q application field and working principle
Introduction
The 2SB1590KT146Q is a bipolar junction transistor (BJT). It is a single type of BJT with plastic encapsulated, molded package. The device provides the desired benefits in various applications, of which its working principle is the basis. Understanding 2SB1590KT146Q application field and working principle helps determine the best use for ensuring maximum efficiency.
2SB1590KT146Q Application Field
The 2SB1590KT146Q is designed for usage in high-power switching, such as switching power supplies, UPS, and motor control. The device has minimal conduction loss and a higher surge current capability, allowing stable operation over a wide area. The other applications include audio amplifiers, line control, and regulator. It provides high accuracy, stability and reliability in the particular application areas. Also, the device has an integrated protection circuit to prevent abnormal operation and to protect the circuit from overcurrent.
2SB1590KT146Q Working Principle
BJT is a current controlled semiconductor device composed of three doped layers of silicon. It can be used for amplification and switching using two p-n junction. The 2SB1590KT146Q is an NPN type BJT with an AC gain of 100V/A and a collector-emitter breakdown voltage of 100V. The collector voltage should be between 4 and 40V and base-emitter voltage should be 6 to 40V for the required amplification. It has the ability to amplify relatively small signals into large signals capable of driving various loads.
The 2SB1590KT146Q working principle involves the application of base current to a resistor-capacitor network. The positive charge generated on the capacitors acts as a gate to the NPN transistor. As a result, electrons move across the junction, creating a current flow between the two ends known as the collector current. The voltage applied to the base controls the collector current. As the transistor receives a base current, current flows from the collector to the emitter.
Conclusion
The 2SB1590KT146Q is a single type of bipolar junction transistor (BJT) with plastic encapsulated, molded package. It is designed for high power switching and other application fields such as audio amplifiers, line control, and regulators. Its working principle refers to the application of a base current to the resistor-capacitor network, which produces positive charge acting as a gate to the NPN transistor, making electrons flow across the junction creating a current flow between the two ends known as the collector current. Understanding this application field and working principle helps determine the best use of the 2SB1590KT146Q.
The specific data is subject to PDF, and the above content is for reference
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