2SB1623AP Allicdata Electronics
Allicdata Part #:

2SB1623AP-ND

Manufacturer Part#:

2SB1623AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP DARL 80V 4A TO-220D
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 4A 2...
DataSheet: 2SB1623AP datasheet2SB1623AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220D-A1
Description

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2SB1623AP transistors are a type of single bipolar junction transistor (BJT). They are used as a switching and amplifying electronic component in power circuits and amplifiers, and are given numeric ratings based on their maximum collector current and wattage dissipation. They are available in surface mount and through-hole packages and have been used in a variety of consumer and industrial electronic equipment.

Bipolar junction transistors are three-terminal semiconductor devices, with the simplest form consisting of two p-type and one n-type semiconductor regions. When correctly biased, the transistor is said to be in "saturation", allowing current to flow between the collector and emitter, and thus amplifying or switching signals. The 2SB1623AP transistors are manufactured with high voltage ratings up to 500V and a maximum current rating up to 2A. The maximum collector voltages typically range from around 10V to 200V, and the collector-to-emitter breakdown voltages range from around 10V to 100V.

2SB1623AP transistors can be used for applications that require high-voltage operation and increased power ratings. They are also useful in systems that require high input and output impedances. Such systems can be found in power supplies, DC-to-DC converters, power control circuits, and motor control circuits. They have also been used in automotive electronics, such as alternators, motor controllers, and airbag sensors.

The working principle of 2SB1623AP transistors is similar to that of other bipolar junction transistors. When the base is forward biased, current flows through the base-emitter junction and carriers are injected into the collector-base region, which causes the current to increase. When the base is reversed biased, current does not flow through the junction, and the current in the collector-emitter region decreases. This type of transistor has three distinct regions: the base region, the collector region, and the emitter region. Two p-type silicon semiconductor regions are joined together to form the base region, while the collector region and the emitter region are formed by two n-type regions.

The 2SB1623AP transistor is an ideal choice for high-power, high-voltage applications. It features a high current rating and a low saturation voltage, making it suitable for applications such as switching power supplies, DC-to-DC converters, motor control circuits, and motor controllers. Its high voltage rating and power dissipation rating makes it useful in automotive applications as well. The transistor is available in a variety of packages, making it suitable for both surface mount and through-hole designs. With its robust design, the 2SB1623AP transistor is a reliable choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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