| Allicdata Part #: | 2SB1679G0LTR-ND |
| Manufacturer Part#: |
2SB1679G0L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS PNP 10V 0.5A SMINI-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 10V 500mA 130MHz 150m... |
| DataSheet: |  2SB1679G0L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 10V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 8mA, 400mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 130 @ 500mA, 2V |
| Power - Max: | 150mW |
| Frequency - Transition: | 130MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-85 |
| Supplier Device Package: | SMini3-F2 |
| Base Part Number: | 2SB1679 |
Description
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2SB1679G0L is a Bipolar Junction Transistor (BJT) designed by Sanken Electric Co, Ltd. It is a single PNP type transistor that provides high current and low voltage characteristics, making it suitable for a variety of applications. This article will provide an overview of the 2SB1679G0L application field and working principle.The 2SB1679G0L is primarily used in high power switching and amplification circuit designs as they are highly robust and yet retain their superior electrical characteristics. The single package consists of three separate PNP devices, each with a collector-base breakdown voltage of 80V, a collector-emitter breakdown voltage of 44V, and a maximum collector current of 10A. The transistor also has a maximum collector-emitter voltage of 20V and an equivalent noise figure of -12dB. The 2SB1679G0L is specially designed for use in audio and power switching circuits and is ideal for these applications due to its high current and low voltage characteristics. For instance, it is often used as an amplifier in sound applications or as an indicator or as a switch in high power switching circuits. Its low voltage characteristics, combined with its low noise figure, makes it ideal for amplifying audio signals as it does not introduce any distortion. In terms of its working principle, the 2SB1679G0L is a three-lead device. The base of the device is connected to the input signal, while the collector and emitter leads are connected to a load circuit. As the input signal (voltage or current) is applied, the two semiconductor materials sandwiched between the emitter and collector create a conductive channel which controls the current flowing through the device. This channel is determined by the resistance of the base-emitter junction, and by changing the voltage applied to the base, the resistance of the channel can also be varied. Since the transistor is a current-controlled device, it can be used to control current in other circuits. For example, it can be used as a switch or amplifier to control current in other circuits. When used as a switch, the transistor is switched on or off, depending on the input signal. When used as an amplifier, the transistor is used to increase or decrease the current level in a circuit, depending on the input signal. In conclusion, the 2SB1679G0L is a highly versatile single PNP type transistor that is suitable for use in a wide range of applications. It is well known for its robustness and its high current-low voltage characteristics. It has a base-emitter junction which controls the current flowing through the device, making it ideal for use in audio and power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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