Allicdata Part #: | 2SC2229-O(MITIFM)-ND |
Manufacturer Part#: |
2SC2229-O(MITIF,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50MA 150V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m... |
DataSheet: | 2SC2229-O(MITIF,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Power - Max: | 800mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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Transistors - Bipolar (BJT) - Single
For over 60 years, transistors have been used in a variety of applications from radios to microprocessors. Bipolar junction transistors (BJTs) are one of the most common type of transistor. Although BJTs can have a variety of configurations, single transistors are the most general building blocks for electronic circuits. The 2SC2229-O(MITIF,M) is an example of a single transistor that has a wide range of applications.
The 2SC2229-O(MITIF,M) transistor has recently gained popularity in radio frequency (RF) applications due to its high breakdown voltage and low noise characteristics. It is a NPN transistor, meaning it has three leads: the collector (C), base (B), and emitter (E). The collector is used to power the transistor, while the base and emitter control the collector current. When the base is "on", current can flow from the collector to the emitter. When the base is "off", the current is blocked off. This transistor is useful for amplifying signals, switching signals, and providing voltage regulation.
The 2SC2229-O(MITIF,M) transistor has a few features that make it suitable for RF applications. One is its low noise figure of -47dB. Another is its high breakdown voltage of 175 V. This transistors also has a maximum power dissipation of 1.5W and a frequency range of up to 10 MHz. Furthermore, this transistor has a maximum collector current (Ic) of 430 mA, making it suitable for high-current applications.
The 2SC2229-O(MITIF,M) transistor works on the principle of electron flow. When an electromotive force (EMF) is applied across the base and the collector, electrons flow from the collector to the base and from the base to the emitter. The magnitude of the EMF applied to the base determines the amount of current that flows from the collector to the emitter. When a large EMF is applied to the base, more electrons are pulled from the collector to the base and the collector current is increased. The opposite is true when the EMF is decreased. This electron flow principle is what makes transistors useful for amplification and switching applications.
The 2SC2229-O(MITIF,M) is suitable for a variety of digital and analog applications, including power amplifiers, voltage regulators, oscillators, and switches. It is also widely used in radio frequency applications due to its low noise figure and high breakdown voltage. It is an economical transistor that offers high performance and reliability, making it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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