Allicdata Part #: | 2SC2235-O(T6FJTAF-ND |
Manufacturer Part#: |
2SC2235-O(T6FJT,AF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-O(T6FJT,AF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SC2235-O(T6FJT,AF application field and working principle
The 2SC2235-O(T6FJT,AF is a NPN Epitaxial Planar silicon transistor used in various electronic applications. This device belongs to the Transistors - Bipolar (BJT) - Single category. It has a collector-emitter voltage of 45V, a collector current of 1.6 ampere, and a DC current gain of 130 to 650.2SC2235-O(T6FJT,AF is suitable for use in peripheral applications such as low frequency amplifiers, dc-dc converters, and driver circuits.
Working Principle
The 2SC2235-O(T6FJT,AF transistor is a three-terminal semiconductor device that contains four layers of alternating p-type and n-type material. Two of the terminals, known as the base and collector, are attached to p-type material. The third terminal, called the emitter, is attached to n-type material. When a voltage is applied across the base-emitter junction, it causes current to flow through the transistor.This current flow is controlled by the current flowing through the base-emitter junction, which is known as the base current. As the base current increases, the current flowing through the collector-emitter junction (known as the collector current) also increases, resulting in amplification. This is the principle on which transistors operate.
Advantages
2SC2235-O(T6FJT,AF transistors offer several advantages over other types of transistors. They are simple to use, with few external components required for operation. They also require less power, allowing them to be used in portable devices. They are also extremely reliable and can handle high collector currents, making them well suited for applications such as amplifiers and switching circuits. Additionally, they are relatively inexpensive and readily available.
Disadvantages
2SC2235-O(T6FJT,AF transistors have some disadvantages. As they are three-terminal devices, they are more complex than other types of transistors. Additionally, they require a base current to operate, so they tend to consume more power than other transistors. They also have slow switching speed, so they cannot be used in high-frequency applications.
Conclusion
The 2SC2235-O(T6FJT,AF transistors are a type of NPN Epitaxial Planar silicon transistor. They are well suited for low frequency amplifiers, dc-dc converters, and driver circuits. They are reliable and efficient, and relatively inexpensive and easy to use. They have some disadvantages, such as needing a base current to operate and having slow switching speed, but these can be overcome in most applications.
The specific data is subject to PDF, and the above content is for reference
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