
Allicdata Part #: | 2SC2482(T6TOJSFM-ND |
Manufacturer Part#: |
2SC2482(T6TOJS,F,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 100MA 300V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 900m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 10V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2482 (T6TOJS,F,M) is a bipolar junction transistor (BJT) used for various purposes in different areas. It is classified as a single BJT transistor, represented by the symbols C for collector, B for base, and E for emitter. It has been designed to operate over an extended temperature range (−30°C to +150°C) and is suitable for use in wide temperature environments. It has a variety of uses and applications in electronic circuits.
The 2SC2482 is a NPN-type silicon BJT transistor with a collector-base voltage (V CB ) of 600V and a collector-emitter voltage (V CE ) of 80V. It can handle a collector-emitter current (I C ) of 6A and has a continuous collector power dissipation of 50W. The transistor\'s breakdown voltage is 1200V.
The 2SC2482 is widely used in switching and amplification applications such as high-frequency switching, linear amplifiers, and radio transmitters and receivers. It is commonly found in a variety of power switching and output interface circuits, as well as low-noise amplifiers. It is also widely used in audio amplifiers, inverters, and motor control systems. Its ability to handle high currents and its high breakdown voltage make it a reliable device for higher power applications.
As far as the working principle of the 2SC2482 is concerned, it works based on the principle of electron movement from the emitter to collector when the base is activated. When the base is reverse-biased, the collector-emitter current flow is blocked and the transistor goes into a cut-off state. When the base voltage is increased, the flow of current increases. This allows the transistor to function as a switch to turn on or off other components in the circuit. By adjusting the base voltage, the desired output can be achieved.
The 2SC2482 also features a low current gain, enabling it to be used in small-signal transistor applications. With its high collector current and power dissipation rating, it can be used to support the higher currents required in switching applications. Its high reverse voltage capability makes it suitable for use in protection circuits. In addition, its temperature range allows it to operate in extreme environmental conditions.
In conclusion, the 2SC2482 is a high-performance, reliable single BJT transistor that can be used in various applications such as high-frequency switching, linear amplifiers, and radio transmitters and receivers. It is designed for a wide temperature range, making it suitable for use in extreme environmental conditions. Its versatility makes it suitable for use in both switching and linear applications. Its low current gain and high collector current capabilities enable it to handle the higher currents required in switching applications.
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