Allicdata Part #: | 2SC4808J0LTR-ND |
Manufacturer Part#: |
2SC4808J0L |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 10VCEO 80MA SSMINI-3 |
More Detail: | RF Transistor NPN 10V 80mA 6GHz 125mW Surface Moun... |
DataSheet: | 2SC4808J0L Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.14137 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 6GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 2dB @ 800MHz |
Gain: | 11dB ~ 14dB |
Power - Max: | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 8V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F1 |
Base Part Number: | 2SC4808 |
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2SC4808J0L is a type of bipolar junction transistor which belongs to the family of RF (radio frequency) transistors. This type of transistor is mainly used for RF amplifying and switching application. It consists of three terminals, namely emitter, collector, and base, and is hence classified as a three-terminal device. The application of this type of transistor is mainly in mobile radio transmitters. The working principle of 2SC4808J0L is based on the fact that it has two PN junctions, which are the collector-base junction and the emitter-base junction.
When a small voltage is applied to the base of the transistor, a current flows through the base-emitter junction, and this current (common emitter current) is then amplified across the collector-emitter junction. The collector current of the transistor is determined by the current flowing through the base-emitter junction. This current can then be used to control switching applications and RF amplifying applications.
In case of RF amplifying applications, the 2SC4808J0L transistor is used in design of Low Noise Amplifier (LNA) circuits. The 2SC4808J0L can provide very low noise figure (NF) and have good efficiency along operating in linear envelope tracking (LET) and medium power gain of around 12 dB. The circuit is main designed to support ultra low power amplifier design at low voltage design.
2SC4808J0L can also be used for switching applications, like in the design of a CMOS variable gain RF amplifier. The variable gain amplifier mainly consist of two transistors; the first serves as a variable gain amplifier, while the second as a switch. The 2SC4808J0L transistor works as a switch and acts as an on/off switch for the gain amplifier, thus allowing the gain of the amplifier to be changed quickly. In order to control this switching action, the base voltage of the transistor is controlled. By changing the base voltage, the flow of current across the collector-emitter junction is changed, thus allowing the gain of the amplifier to be changed.
The 2SC4808J0L transistor is also known for its strong current gain as it has low operating temperature coefficients, making it ideal for use in conditions with high temperature. Also, the 2SC4808J0L devices are known for their ability to reduce on-resistance, resulting in faster response time and improved overall performance of the circuits.
In conclusion, 2SC4808J0L is a type of bipolar junction transistor that is mainly used for RF amplifying and switching application. It consists of three terminals – emitter, collector and base, and works on the principle that current is amplified across the collector-emitter junction. This transistor is useful in designing circuits such as Low Noise Amplifier (LNA), variable gain RF amplifier, and more. It features strong current gain, low operating temperature coefficient, and improved performance of the circuits.
The specific data is subject to PDF, and the above content is for reference
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