2SC4482T-AN

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2SC4482T-AN is a high-performance NPN planar type transistor. It has an excellent hFE linearity with a wide collector current range, making it perfect for general-purpose switching applications. This transistor is suitable for use in applications such as home appliances, motor drives, and power supplies.

The 2SC4482T-AN features a Collector-Base Breakdown Voltage (V(BR)CBO) of 200V, maximum DC Collector Current of 8A, and maximum Power Dissipation (PD) of 350W. It has a high gain of 600 to 800 with a Collector-Emitter Voltage of 15V and an Emitter-Base Voltage of 5V.

The 2SC4482T-AN is an NPN planar type transistor. It is constructed with multiple layers of semiconductor material that are doped with impurities to create a collector, base, and emitter. This transistor has a low on-state voltage drop and low saturation voltage. Its die-cast package construction delivers a high thermal performance and resistance to environmental stress. It has a high switching speed and low reverse leakage current, making it ideal for a variety of applications in high-frequency switching and pulsed applications.

The working principle of this transistor can be explained as follows. When current is applied to the base, it is amplified and transferred to the collector, while current is transferred from the emitter to the base. This process is known as current amplification. The collector-emitter voltage is the voltage difference between the collector and the emitter, and this voltage is always less than the supply voltage that is applied to the transistor. The voltage is controlled by the base current with the help of which, the collector current can be controlled.

2SC4482T-AN is perfect for applications such as motor drives, home appliances and power supplies. The high gain and low on-state voltage drop makes it suitable for use in high-frequency switching and pulsed applications. With its high reliability and durable construction, this transistor is a good choice for engineers and manufacturers who require a reliable and efficient transistor for their applications.

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