Allicdata Part #: | 2SC4614S-ANOSTR-ND |
Manufacturer Part#: |
2SC4614S-AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 1.5A NMP |
More Detail: | Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 1W T... |
DataSheet: | 2SC4614S-AN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-71 |
Supplier Device Package: | 3-NMP |
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2SC4614S-AN Application Field and Working Principle
Bipolar junction transistors are widely used in applications, and the 2SC4614S-AN is a particular type of NPN bipolar junction transistors. This type of transistor, being an NPN, operates using general interaction between the base and emitter of the semiconductor, and is commonly referred to as the BEM (base-emitter-collector) configuration. This transistor has an application field of switching applications and is intended for use primarily as an amplifier.
The 2SC4614S-AN is a general-purpose NPN bipolar junction transistor with a current gain of approximately 70 and a maximum collector-to-emitter voltage of up to 20 volts. This type of transistor has a low-collector saturation voltage, resulting in very high efficiency. It also has a wide operating voltage range from 5 volts to 20 volts.
2SC4614S-AN Working Principle
At its basic level, the 2SC4614S-AN works by using a base-emitter-collector (BEM) configuration. This configuration consists of an emitter (E), base (B), and collector (C), connected in series, forming a single electrical circuit. When a voltage is applied to the emitter, a current flows through the emitter and base, and then the base current is further amplified to create a larger current through the collector, thus operating as an amplifier. By controlling the temperature and voltage in the base, the two main parameters of the 2SC4614S-AN, the current gain and collector-to-emitter voltage, can be adjusted.
This transistor can be used in applications such as switching circuits, audio amplifiers, and low noise amplifiers (LNP). This transistor is capable of handling high frequencies and is suitable for a variety of applications. This type of transistor is also used in radio frequency (RF) applications, as it works well with RF signals.
2SC4614S-AN Advantages
The advantages of the 2SC4614S-AN are numerous. Firstly, it has a high current gain and can operate reliably in temperatures up to 125°C. Secondly, it has a low transition voltage making it suitable for applications where energy efficiency is important. Additionally, it is rated for a wide range of input voltages and has a high switching speed, making it suitable for use in high-frequency applications. Finally, it is reliable and durable, reducing the need for frequent replacement.
2SC4614S-AN Disadvantages
The primary disadvantages of the 2SC4614S-AN, or any bipolar junction transistor for that matter, is that it has a relatively low efficiency compared to other types of transistors, and its current gain is limited compared to other types of transistors. Additionally, due to the nature of its design, the 2SC4614S-AN is more prone to failure than other transistors.
Conclusion
The 2SC4614S-AN is a general-purpose NPN bipolar junction transistor with a current gain of approximately 70 and a maximum collector-to-emitter voltage of up to 20 volts. It\'s suitable for operation in switching circuits, audio amplifiers and low noise amplifiers, as well as being suitable for radio frequency applications due to its wide operating voltage range and high frequency operation. The advantages of this type of transistor include high current gain, low transition voltage, high switching speed, and reliability, while the disadvantages include the relatively low efficiency compared to other types of transistors and the susceptibility to failure due to its structure.
The specific data is subject to PDF, and the above content is for reference
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