2SC4468

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SC4468 is a general-purpose NPN transistor used in a variety of applications. It is a medium power transistor, with a collector-emitter breakdown voltage of 40V, a maximum DC current gain of 500, and a total power dissipation of 500mW. It is available in a package with 2 or 3 pins.

The 2SC4468 is primarily used for amplifier, switch and signal processing applications. It has a high input impedance and can be used for signal transmission, signal isolation, and inverting voltage levels. The low collector-emitter saturation voltage makes the 2SC4468 an ideal candidate for applications requiring higher linearity and less distortion.

The 2SC4468 works on the principle of minority carrier injection. It has two semiconductor layers, one of which is predominately composed of P-type semiconductor material, while the other is predominately composed of N-type material. When a voltage is applied to the two layers, electrons will move from the N-type layer to the P-type layer and create a depletion region, thus creating a PN junction. In the device, these two layers are connected in a common emitter configuration. When a voltage is applied to the base-emitter junction, an electric field is generated which causes electrons to be injected from the emitter into the base region. The base current then flows through the collector-base junction, creating an amplified current flow in the collector.

The operation of the 2SC4468 transistor follows the standard bipolar junction transistor (BJT) theory. The input current controls the output current, and the device acts as an amplifier. It is also temperature-sensitive, and the gain decreases as temperature increases. Additionally, the 2SC4468 has a low maximum current gain, so it is not ideal for high current applications.

Overall, the 2SC4468 is a useful medium power transistor for a variety of applications. It is capable of amplifying and inverting voltage levels, and can be used for signal transmission and signal isolation. While its low maximum current gain limits it to low current applications, its high input impedance and low collector-emitter saturation voltage make it an ideal candidate for more demanding applications requiring higher linearity and less distortion.

The specific data is subject to PDF, and the above content is for reference