2SC4883A

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	180V
Vce Saturation (Max) @ Ib, Ic:	1V @ 70mA, 700mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 700mA, 10V
Power - Max:	20W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

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<p>The 2SC4883A is a NPN transistor created and manufactured by Toshiba Corporation for use in a multitude of roles and applications. The device is a medium power, wide band-gap type NPN silicon bipolar transistor and is best used for amplification and switching applications, particularly in high-frequency circuits. The device is also commonly used in a range of industrial, consumer, and computer related electronics such as linear-amps, car stereos, audio amplifiers, RF circuits and more. </p><p>The 2SC4883A operates on the principle of a bipolar junction transistor (BJT). A BJT is a type of electronic device based on the P-N junction, with three terminals connecting the emitter, the base (or collector) and the collector (or base). When a voltage is applied across the collector and the base of the device, the current (collector current) is amplified and currents can also flow in both directions. This is referred to as the Small Signal Model (SSM) of the device. </p><p>BJTs are one of the most common semiconductor devices used in today\'s electronics and the 2SC4883A is no exception. One of the unique features of this device is its ultra-wide frequency band-gap characteristic. This wide band gap allows it to operate at higher frequencies and power levels, making it ideal for high-frequency and broadband applications. In addition, its high collector-emitter breakdown voltage, low temperature coefficient and good linearity characteristics make it suitable for linear amplifier applications. </p><p>In terms of its applications, the 2SC4883A is typically used in high-frequency circuits, linear amplifiers and RF amplifiers. It is also an ideal choice for car audio amplifiers and switching power supplies. Furthermore, it is also well suited for use in consumer electronics such as portable devices and computers. </p><p>This device is also versatile enough to be used in a range of other general-purpose amplification and switching demands, including battery-powered devices, low-noise headphones, audio amplifiers, radios and more. It is also used in telecom and industrial applications. </p><p>The 2SC4883A offers a wide range of advantages for users, including low DC current gain, low bandwidth, high fT (transition frequency), wide frequency band-gap characteristics, good linearity characteristics, high collector-emitter breakdown voltage, high collector-emitter saturation voltage, and low noise. These features make it one of the most versatile transistors available. </p><p>Overall, the 2SC4883A is a high-performing, versatile NPN silicon bipolar transistor. Its wide frequency band-gap, low noise and good linearity characteristics make it an ideal choice for a range of applications, particularly in high-frequency circuits, linear amplifiers, car audio amplifiers, switching power supplies and more. </p>

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