| Allicdata Part #: | 2SC5439(F)-ND |
| Manufacturer Part#: |
2SC5439(F) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS NPN 450V 8A TO220NIS |
| More Detail: | Bipolar (BJT) Transistor NPN 450V 8A 2W Through H... |
| DataSheet: | 2SC5439(F) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 8A |
| Voltage - Collector Emitter Breakdown (Max): | 450V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 640mA, 3.2A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 1A, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220NIS |
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2SC5439(F) Application Field and Working Principle
The 2SC5439(F) is a single bipolar junction transistor (BJT) with a medium- to high-power rating. 2SC5439 is a medium-power transistor generally used in high-speed switching applications and non-isolated DC-DC converters. It is also used in applications that require high peak current or speed such as solar cells, electronic load controllers, IGBT/MOSFET drivers, and LED applications.
This transistor has a collector emitter voltage of up to 200V and can withstand a collector current of up to 2A. It has a maximum power dissipation of up to 3W with a current gain range of 50-400. The 2SC5439(F) is an efficient device with a low ON-Resistance (RDS ON) of 0.3 Ω and an input capacitance of 7.17 pF. It has a typical turn-on delay time of 65 ns and a turn-off delay time of 140 ns.
The working of this transistor is based on the same principles of operation as any other type of bipolar transistors. It consists of three doped semiconductor regions, namely the Base, the Collector, and the Emitter. These three layers are connected to the application circuit, and they are responsible for current flow. When the Base receives a signal current, it causes an amplified current to flow between the Collector and Emitter. This amplified current is referred to a “gain current”. The current gain of the transistor is defined by h FE and it can be increased or decreased as per application requirements.
Due to its various advantages, the 2SC5439(F) has found applications in many electronic circuits like oscillators, amplifiers, switch circuits, and so on. It is used in the switching and amplification of signals, and in analog circuits too. It is also used in power systems such as power controllers, power converters, etc. It is also used in the automotive industry for its high power handling capabilities and low ON-Resistance capability. It is also used in robotics and medical equipment as it provides an efficient and stable solution for various applications.
Overall, the 2SC5439(F) is a versatile and cost-effective device with an excellent combination of performance, size and cost. It is available in many different packages styles as well, making it an ideal choice for many applications. It has been used extensively in many different applications due to its high power handling capability, low on-resistance, and fast response time. This makes the 2SC5439(F) a great choice for many high-speed switching applications in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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2SC5439(F) Datasheet/PDF