2SC5569-TD-E Allicdata Electronics
Allicdata Part #:

2SC5569-TD-EOSTR-ND

Manufacturer Part#:

2SC5569-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 7A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 50V 7A 330MHz 1.3W Su...
DataSheet: 2SC5569-TD-E datasheet2SC5569-TD-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.3W
Frequency - Transition: 330MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89/PCP-1
Description

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Transistors are semiconductor devices that fundamentally act as electronic switches. These versatile switches are so essential to electronic circuitry that virtually every electronic circuit contains at least one transistor. One such type is the Single Bipolar Junction Transistor (BJT). One example of a Single BJT is the 2SC5569-TD-E, which can be used in various applications.

The 2SC5569-TD-E is mainly used for power switching applications in automotive circuits, such as for ignitions, inverters, CPU power supplies, and microcontrollers. They are also suitable for industrial onboard machinery, such as for factory automation and other various control systems. The 2SC5569-TD-E is designed for use in the very low power range, allowing for applications requiring minimal current.

The 2SC5569-TD-E is a PNP-type bipolar junction transistor (BJT), which has a general structure consisting of three main parts: the emitter, the base, and the collector. The emitter and collector each have an internally connected n-type semiconductor layer, and the base has an externally connected p-type layer. This creates a PN junction between the emitter and the base, and another between the base and the collector. In this JFET, the collector is the main current-carrying path. Voltage is applied to the base to control the current flowing from the collector to the emitter.

The 2SC5569-TD-E has a maximum collector current rating of 0.3A and a maximum collector-emitter voltage rating of 30V. It is rated for a maximum power dissipation of 0.3W and has a transition frequency of 250MHz. It has an insulation resistance of 1GΩ and a thermal resistance of 100K/W. It is packaged in a TO-220 package.

In terms of its functionality, the 2SC5569-TD-E operates as a switch that is opened and closed depending on the base voltage. When base voltage is applied, the current from the collector to the emitter increases. As the base voltage is increased, the current continues to increase until the saturation limit is reached. When the base voltage is reduced, the current decreases until the shutdown limit is reached, at which point the 2SC5569-TD-E will be switched off. The transition temperature range for the 2SC5569-TD-E is -40°C to 125°C. The device also has very low noise characteristics, allowing it to be used in noise-sensitive applications.

The 2SC5569-TD-E is a reliable and versatile device that can be used in a wide variety of applications. Its low power requirements, reliable functioning, and low noise operation make it ideal for automotive, industrial, and microcontroller applications.

The specific data is subject to PDF, and the above content is for reference

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