
Allicdata Part #: | 2SC5658T2LSTR-ND |
Manufacturer Part#: |
2SC5658T2LS |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 50V 0.15A VMT3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 150m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.03000 |
10 +: | $ 0.02910 |
100 +: | $ 0.02850 |
1000 +: | $ 0.02790 |
10000 +: | $ 0.02700 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Base Part Number: | 2SC5658 |
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2SC5658T2LS is a bipolar junction transistor (BJT) that is part of the single transistor family. It is used in various applications that require high switching speed, high breakdown voltage, and high output power. The 2SC5658T2LS is a PNP type of transistor and can be used for switching, amplifying, and signal processing applications. Its features include a low gate threshold voltage, high switching speed, low on-resistance, and an adjustable collector current.
The 2SC5658T2LS application field includes high frequency signal processing, industrial automation, and telecommunications. Its working principle is based on the two electrodes, known as a base and emitter, that generate a current flow between them. When a current flows through the base-emitter junction, it is known as the collector current which is proportional to the base current. With this base current being amplified, a voltage across the collector and emitter terminal causes a current to pass through the load.
By adjusting the bias voltage across the base-emitter junction, the 2SC5658T2LS can be used in different types of amplifiers and signal processing circuits. For example, in a class B amplifier, the base-emitter junction is biased so that the collector current remains constant and the output power increases. This is done by using the transistor to switch the load current on and off at a set frequency, allowing for amplification without distortion. In addition, it can be used as an oscillator or as a buffer that can reduce the output current.
The 2SC5658T2LS also has a low power dissipation and a high breakdown voltage which makes it suitable for applications that need to handle high voltage. It also has a low gate threshold voltage and a high switching speed, which allows it to quickly turn on and off and reduce switching losses. These features make the 2SC5658T2LS a great choice for applications that require a high switching speed and high output power.
Because of this, the 2SC5658T2LS has become an industry standard for various applications that require a high switching speed and high output power. This transistor has been used in various applications such as power control, switching power supplies, telecommunications, complex microwave systems, and wireless communication. It has also been used in audio and video amplifiers, high speed logic circuits, modulators, and oscillators.
In summary, the 2SC5658T2LS is a single, bipolar junction transistor (BJT) that can be used in various applications that need high switching speed, high breakdown voltage, and high output power. Its application field includes industrial automation, telecommunications, and high frequency signal processing. Its working principle is based on the base-emitter junction which generates a collector current that is proportional to the base current. By adjusting the bias voltage across the base-emitter junction, the 2SC5658T2LS can be used in different types of amplifiers and signal processing circuits.
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