2SC5707-TL-E Allicdata Electronics
Allicdata Part #:

2SC5707-TL-EOSTR-ND

Manufacturer Part#:

2SC5707-TL-E

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 8A TP-FA
More Detail: Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Surf...
DataSheet: 2SC5707-TL-E datasheet2SC5707-TL-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 330MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA
Description

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The 2SC5707-TL-E is a real time switching n-p-n transistor (Transistors - Bipolar (BJT) - Single) primarily designed for use in audio, radio frequency (RF) and high frequency communication device. This small signal transistor with a TO-92 package has a maximum power dissipation output of 500 mW, an operating frequency range up to 60 MHz, and an operating temperature range of -55 to +150°C. As a small signal transistor, the 2SC5707-TL-E has a high gain bandwidth of 2 MHz and an associated noise figure of 2.0 dB.

The 2SC5707-TL-E has two main application fields; the first is high frequency communication which include digital signal processing, optical signal transmission and digital modulation. The second application field is audio frequency equipment such as amplifiers, preamplifiers and other audio signal circuits. Due to its versatile characteristics of high current handling, low thermal resistance, low transition frequency and low impedance, the 2SC5707-TL-E can provide a stable output signal in these devices.

The working principle of the 2SC5707-TL-E is based on the motion of charge carriers. In a typical n-p-n transistor, a total of three layers of semiconductor material are joined together and stacked to form three layers of P-type material, N-Type material and P-type material respectively. When the electrodes, usually called base, gate and emitter, are connected to a voltage source or current, a potential bias is formed. This potential bias creates an electric field in the semiconductor material, which causes charge carriers in the p-type and n-type material, such as electrons and holes, to move towards one another. This flow of charge, known as a junction, causes current to be induced in the semiconductor material and produces a voltage gain in the 2SC5707-TL-E.

The 2SC5707-TL-E has many advantages when used as an electronic device in a wide variety of electronic components and applications. Most notably, its small size, low power consumption and low voltage drop across its junctions make it ideal for use in applications with limited space, such as audio devices and RF circuits. In addition, its high gain and wide frequency range make it one of the most commonly used transistors for various frequency-sensitive and voltage-aware circuits. Finally, its low noise and low thermal resistance allow it to be used in environments that require high functioning and reliable electronic devices.

In conclusion, the 2SC5707-TL-E is a real-time switching n-p-n transistor with two main application fields; high frequency communication and audio frequency equipment. As a small signal transistor, it has many advantages and is suitable for providing a stable output signal with low thermal resistance, wide frequency range and low noise. As an important component in today\'s market, the 2SC5707-TL-E can provide a wide range of cost-efficient and reliable services to its users.

The specific data is subject to PDF, and the above content is for reference

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