2SC58630QL Allicdata Electronics
Allicdata Part #:

2SC58630QLTR-ND

Manufacturer Part#:

2SC58630QL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 300V 0.07A MINI-3
More Detail: Bipolar (BJT) Transistor NPN 300V 70mA 80MHz 200mW...
DataSheet: 2SC58630QL datasheet2SC58630QL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: 2SC5863
Description

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2SC58630QL application field and working principle Transistors - Bipolar (BJT) - SingleThe 2SC58630QL is a bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and is part of their 2SC series of BJT transistors. This type of transistor is designed for use in a variety of electronic applications, and operates in a single-stage amplifier configuration. The 2SC58630QL is a newer model from Toshiba, and it has a wide range of useful applications in modern electronics.When compared to the other types of transistors, the 2SC58630QL has a variety of advantages. These include better stability, greater efficiency, and improved signal fidelity. Additionally, the 2SC58630QL is extremely reliable, which is why it is used in high-end systems that require precise and precise control.BJT transistors, such as the 2SC58630QL, have an intrinsic layer of P-type semiconductor material between the base and collector layers. As the voltage going into the transistor increases, the current flow in the emitter and collector regions decreases. This type of transistor is commonly used in Linear amplifiers, such as those used in audio amplifiers and broadcasting.The Working Principle of the 2SC58630QL is based on the basic operation of a BJT. The transistor can be operated in either a Common-emitter (CE) or Common-base (CB) configuration. In the CE configuration, the current flow is going from the Base-Emitter and then from the Collector-Base. This means that the current is being amplified in the collector, and then passed through the base and then back to the emitter.In the Common-base configuration, the current flow is opposite, going from the Emitter-Collector, and then the Base-Emitter. This type of operation is used more often in Class A amplifiers, as it gives the devices more performance and stability.The overall performance of the 2SC58630QL is dependant on many factors including the frequency of operation, the collector-base voltage, and the load current. In addition to this, it is also important to consider the temperature of the device, as this can affect the performance, and should be taken into consideration when designing any system utilizing this type of transistor.The 2SC58630QL is extremely versatile and can be used in a variety of electronic systems, including audio equipment, home theater systems, automobiles, and other electronic applications. It is also widely used in industrial applications such as the control of electronic motors and lights. This type of transistor offers many advantages when compared to other types of transistors, including its high performance and flexibility, allowing for the development of highly accurate and precise devices that can be quickly and easily adapted to a variety of uses. Another benefit to using this type of transistor is its low power consumption, making it more suitable for low-cost and low-power systems.The 2SC58630QL is an extremely powerful and versatile device that can be used in a wide variety of electronic applications. It is a reliable, efficient, and cost-effective solution for modern electronics, enabling engineers to quickly and easily create high-end devices that are capable of withstanding even the toughest conditions.

The specific data is subject to PDF, and the above content is for reference

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