2SD2014 Allicdata Electronics
Allicdata Part #:

2SD2014-ND

Manufacturer Part#:

2SD2014

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS NPN DARL 80V 4A TO220F
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A 7...
DataSheet: 2SD2014 datasheet2SD2014 Datasheet/PDF
Quantity: 7584
Stock 7584Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Power - Max: 25W
Frequency - Transition: 75MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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A 2SD2014 transistor is an NPN transistor in the category of bipolor junction transistors (BJT). It is typically used as a switch or amplifier in digital and small signal circuits. Its main uses include general-purpose switching and amplification.

The 2SD2014 is a silicon NPN transistor has three pins, base, emitter, and collector. The transistor has different functions in both its switching applications and amplifier applications. In its switching application, the base-emitter junction works as a forward-biased diode, thereby completing a path for electricity to flow from the collector to the emitter when the base voltage is high. In an amplifier application, the transistor amplifies current to a power level.

The transistor can operate in either a linear or cutoff (saturation) mode. In the linear mode, the transistor passes a controlled amount of current when voltage is applied to the base. In the cutoff mode, the transistor does not pass current and instead, the collector current is nearly zero. The linear mode has a flat response, resulting in a more constant current, while the cutoff mode has a sharp dropoff in collector current.

The 2SD2014 has a wide range of uses and is used in a variety of applications such as amplifiers, relays, oscillators, audio systems, television circuits, and even in medical equipment. In addition, the device is well-suited for power control applications such as TVs, lamps, motors, and solenoids. Additionally, the device also finds its application in the satellite communication and instrumentation industries.

As for its working principle, the 2SD2014 operates in two main operating conditions: active region and saturation region. In the active region, the device amplifies the input signal applied to the base by a certain factor depending on the value of its current gain, known as hFE (beta). This hFE is determined by the amount of base current. During the saturation region, the device draws its maximum current, allowing the collector current to drop significantly as the collector-base junction gets reversed biased.

Furthermore, the 2SD2014 has a maximum power dissipation rating of 625mW. This rating enables it to operate in its linear region to amplify a signal without overheating. One should make sure the device does not exceed this power dissipation limit.

Overall, the 2SD2014 is an efficient and reliable enhancement-mode NPN device used to amplify or switch signals in a variety of electronic applications. It has a wide range of uses and applications, and its working principle makes it a good choice for power control applications. The device also offers a cost-effective solution for digital and small signal circuits.

The specific data is subject to PDF, and the above content is for reference

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