2SD22200RA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	8000 @ 1A, 10V
Power - Max:	1.5W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	MT-3-A1
Base Part Number:	2SD2220

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Introduction
The 2SD22200RA is a single bipolar Junction Transistor (BJT). It has a small hole mobility and a low leakage current. It has a wide range of applications and is suitable for medium speed switching, low to medium power level amplifiers, general purpose switching, and other applications. This article will discuss the application field and working principle of the 2SD22200RA.

Application Field
The 2SD22200RA is most commonly used in medium speed switching and low to medium power level amplifiers due to its low power consumption and small size. In medium speed switching, it can be used as an inverter to control the flow of current in circuits. Its small size and low power consumption also make it ideal for use in radio receivers, audio amplifiers and oscillators. Additionally, the 2SD22200RA can be used as a general purpose switching component for a variety of applications. It can be used to build a variety of circuits such as logic gates, comparators, pulse amplifiers, power switches and voltage regulators.

Working Principle
The 2SD22200RA is a NPN bipolar Junction Transistor (BJT). A BJT usually consists of three pins, the collector, base and emitter. It works either as a voltage amplifier or current amplifier depending on the signal applied. When a signal is applied to the base terminal, electrons are attracted towards the base terminal, creating a small amount of current flow between the emitter and collector. The base acts as a control terminal and the collector and emitter act as signal paths. The signal applied to the base can either be a voltage signal or a current signal. If a voltage signal is applied, the voltage variations at the base are amplified and transferred to the collector and emitter terminal. This makes the 2SD22200RA useful as an amplifier. On the other hand, if a current signal is applied, the current variations at the base are amplified and transferred to the collector and emitter terminal. This makes the 2SD22200RA suitable for use as a switch.

Conclusion
The 2SD22200RA is a NPN bipolar Junction transistor. It has a small hole mobility and a low leakage current and is suitable for a variety of applications such as medium speed switching, low to medium power level amplifiers, general purpose switching, and other applications. Its working principle involves the amplification of voltage or current that is applied to the base terminal, which is then transferred to the collector and emitter terminals.

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