2SD2083

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 24mA, 12A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 12A, 4V
Power - Max:	120W
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

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The 2SD2083 is a single-pole, double-throw (SPDT) bipolar junction transistor (BJT) commonly used for applications in audio engineering. It has a maximum collector-emitter voltage of 40 Volts and a maximum current rating of 1.5 Amps. The 2SD2083 can be used in many different applications including oscillators, power amplifiers, switching circuits, and high-frequency amplifiers.The working principle of a BJT is extremely complex, and is based on the behavior of electrons within the device. Electrons are either “injected” or “collected” in the collector region. When the current in the base region is increased, more electrons are “injected” into the collector region, resulting in a greater current flow. Conversely, when the current in the base region is decreased, electrons are “collected” from the collector region, resulting in a reduced current flow. This process is known as current gain.To enable current gain, the 2SD2083 is constructed with three distinct regions. These regions, called the base, collector, and emitter, are separated by a thin layer of metal, called the base-collector region. This metal layer contains a small amount of resistive material called the base-collector junction.When a voltage is applied to the base of the device, a current begins to flow from the base to the collector. This current is called the collector current (I_c). The amount of current that flows determines the amount of current gain and is determined by the transistor’s characteristics. The amount of current gain is referred to as the gain factor (B), which is equal to the collector current divided by the base current (I_c/I_b).As current flows through the transistor, a charge is generated in the collector-emitter region. This charge is called the collector-emitter voltage (V_ce). This voltage determines the device’s dynamic conductance and its ability to control current flow. The 2SD2083 has a maximum collector-emitter voltage of 40 Volts.The 2SD2083 is a versatile device and can be used in a variety of applications. In audio engineering, it is useful in oscillator, power amplifier, and high-frequency amplifier circuits. In switching circuits, it can be used as a switch to control current flow in a circuit. The device is also useful in voltage regulators, motor controllers, and other circuits where a large current flow needs to be controlled.The 2SD2083 is an efficient device and can handle a maximum current of 1.5 Amps. It is also durable, with a maximum collector-emitter voltage of 40 Volts. Its versatility, efficiency, and durability make the 2SD2083 an ideal choice for many different applications.

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