2SD2185GRL Allicdata Electronics
Allicdata Part #:

2SD2185GRLTR-ND

Manufacturer Part#:

2SD2185GRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 50V 3A MINI-PWR
More Detail: Bipolar (BJT) Transistor NPN 50V 3A 120MHz 1W Surf...
DataSheet: 2SD2185GRL datasheet2SD2185GRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2
Base Part Number: 2SD2185
Description

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The 2SD2185GRL is an advanced bipolar transistor that has a wide range of uses in many electronics applications. The transistor is classified as a single bipolar junction transistor (BJT), meaning it uses two p-type semiconductors in which majority carriers flow from the emitter to the collector. This type of transistor is incredibly efficient and reliable, making it an ideal choice for many applications.

The 2SD2185GRL has an incredibly wide range of applications. It is commonly used as a switch, allowing for a wide range of both latching and non-latching toggle switches for a variety of devices. The transistor also finds use in amplifier circuits, as it can be used to amplify both AC and DC signals to incredible levels. The 2SD2185GRL is also often used as a switch or contact in timer circuits, sequencer circuits, and microprocessor controlled circuits.

In order to understand the working principle of the 2SD2185GRL, it is important to understand the basics of BJTs. In a BJT, the base-emitter junction is forward biased, meaning that a current can flow from the emitter to the base. This creates a voltage drop, which causes holes to drift into the base region and create a depletion layer. The base-collector junction of the transistor is reverse biased, meaning that current can not flow from the collector to the base. This results in a large electric field between the two diodes, which protects the transistor from overloading.

The key to how the 2SD2185GRL works is the relationship between the current gain of the transistor and the amount of base current. The gain of the transistor is directly proportional to the amount of current flowing from the emitter to the base. As more current is supplied to the base, more current can be pulled from the collector, thus increasing the gain. As the gain of the 2SD2185GRL increases, so too does its current handling capacity, so it can be used in a variety of applications that require high current flows.

The 2SD2185GRL is one of the most reliable and versatile transistors available. Its wide range of applications, excellent performance, and high current handling capacity make it an ideal choice for a variety of electronics projects. The 2SD2185GRL’s working principle is simple to understand and easy to apply, making it an invaluable tool in any electronics laboratory.

The specific data is subject to PDF, and the above content is for reference

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