2SD2167T100P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SD2167T100P is a high power n-p-n silicon epitaxial transistor with a high current gain ideal for switching and amplifier applications. It is specifically designed with a high breakdown voltage and has excellent thermal stability. Its flat current gain characteristic enables this device to switch rapidly and reliably. In addition, it is designed to be used as an amplifier, with high gain linearity and frequency response.

The 2SD2167T100P is a great choice for both industrial and commercial applications due to its high performance and durability.

The 2SD2167T100P is designed to be used in a wide range of applications such as audio amplifiers, LED lighting, switching, and power amplifiers. This device is also well suited for use in power circuits for motor control, rectification, and voltage regulation.

It is important to note that the 2SD2167T100P has a very distinct working principle. This device works on the principle that current flow is dependent on the current gain as well as the base-emitter voltage. The base-emitter voltage must be kept low while the current gain should be kept high in order to increase the amount of current flowing through the device. In addition, the base-emitter voltage should remain constant while decreasing the current gain in order to reduce the amount of current flowing through the device.

The 2SD2167T100P is constructed with an n-type semiconductor material (the “n-channel”) and a p-type semiconductor material (the “p-channel”). When a current is applied to the bases (the contacts) of the device, the electrons from the n-channel flow to the p-channel, creating a current through the device. This is why it is important to keep the base-emitter voltage low while increasing the current gain to increase the amount of current flowing through the device.

In summary, the 2SD2167T100P is an excellent choice for a variety of applications due to its high performance and reliability. Its basic working principle is dependent on the current gain and the base-emitter voltage. This device is designed to withstand high voltage, making it suitable for use in a wide array of industrial and commercial applications. With its high current gain and thermal stability, the 2SD2167T100P is an ideal choice for any application requiring high power.

The specific data is subject to PDF, and the above content is for reference