| Allicdata Part #: | 2SD2620G0LTR-ND |
| Manufacturer Part#: |
2SD2620G0L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS NPN 100V 0.02A SSMINI-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 100V 20mA 200MHz 125m... |
| DataSheet: | 2SD2620G0L Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 20mA |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 2mA, 10V |
| Power - Max: | 125mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-89, SOT-490 |
| Supplier Device Package: | SSMini3-F3 |
| Base Part Number: | 2SD2620 |
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The 2SD2620G0L is a type of NPN epitaxial transistor. It is used for general amplification and low-frequency oscillation circuits and is particularly well suited for low-noise AF pre-amplification. This transistor is designed to be used in a wide range of applications where a low-intermediate power amplification is necessary. It is also suitable for low-frequency amplifier circuits, high-speed switching circuits, and high-voltage switching circuits.
The transistor is composed of two p-type and one n-type materials, usually an n-type semi-conductor and p-type semi-conductor. The two p-type regions act as the emitter and collector, while the n-type material acts as the base, which provides a path for carriers to move between the emitter and collector. When the transistor is in its active region, with the base voltage at or above a certain threshold voltage, electrons are swept from the n-type material to the p-type materials, from the emitter to the base and from the base to the collector. This current flow produces an amplified current at the collector.
The transistor has a rated power dissipation of 1.5W and a maximum collector-emitter voltage of 80V. It has an emitter-base breakdown voltage of 8V and a collector cutoff current of 10uA. The available current gains of the transistor range from 15 to 50. The total capacitance of the transistor ranges from 50pF to 900pF, depending on temperature and operating mode.
2SD2620G0L can be used in a variety of applications such as low-noise amplification, audio amplifiers, switching, and linear circuits. It is capable of withstanding high voltages, making it suitable for use in high-voltage designs. Its high current switching capability makes it suitable for use as a push-pull switch. It can also be used in logic circuits and power switching circuits. Additionally, it can be used in motor control circuits and switching regulator circuits.
The 2SD2620G0L is an ideal choice for applications that require good linearity and low-noise amplification. It has low power dissipation, a high current gain, and a wide voltage range, which makes it well suited for a variety of applications. It is widely used in audio and telecommunications equipment, display backlights, and industrial applications. It is widely available, making it an accessible and cost-effective choice.
The specific data is subject to PDF, and the above content is for reference
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2SD2620G0L Datasheet/PDF