Allicdata Part #: | 2SD24590SLTR-ND |
Manufacturer Part#: |
2SD24590SL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 150V 1A MINI PWR |
More Detail: | Bipolar (BJT) Transistor NPN 150V 1A 90MHz 1W Surf... |
DataSheet: | 2SD24590SL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 170 @ 100mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 90MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MiniP3-F1 |
Base Part Number: | 2SD2459 |
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2SD24590SL is a single BJT (Bipolar Junction Transistor) developed by Toshiba Corporation. It has a high DC gain and a high peak voltage rating making it suitable for use in a variety of switched power supply and high power audio applications. The device is available with a range of envelope packages depending on the required application.
The 2SD24590SL is a NPN type bipolar transistor and it’s built on a monolithic silicon chip. It has a Vceo of 500V and Ic of 5A. The collector-emitter breakdown voltage Vceo is the maximum allowable voltage between the collector and the emitter. The current capability of is Ic, which is the maximum allowable current that flows from collector to the emitter during normal operation. This device is rated for a maximum collector-emitter saturation voltage of 300mV and the maximum peak reverse voltage of 500V. This device is also capable of handling very high-frequency signals, and it has a high current gain and a very low power loss.
The 2SD24590SL has two main applications. The first is in switched power supplies. In these, the device is used as a switch to rapidly turn power on and off. The fast response time of the device makes it ideal for controlling fast switching applications. The second application is in high power audio applications. This includes high-power amplifiers, audio receivers and other high-powered audio systems. The high current capability and high peak voltage rating make this an ideal choice for these applications.
The working principle of the 2SD24590SL is based on the concept of conductivity modulation. This occurs when a small electrical signal that changes the conductivity of a semiconductor material, such as silicon. The small signal applied between the drain and the gate of the device controls the size of the electric current flowing from the drain to the source. This current is usually cut off when the voltage between the drain and gate drops below a certain threshold. By controlling this threshold voltage, it is possible to control the amount of current flowing through the device.
In conclusion, the 2SD24590SL is a single bipolar Junction transistor developed by Toshiba Corporation. Its high DC gain and high peak voltage rating makes it ideal for switched power supplies and high power audio applications. It functions based on the concept of conductivity modulation, and its small signal enables it to control the size of the electric current flowing through the device. This makes it both a versatile and reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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