| Allicdata Part #: | 497-5900-5-ND |
| Manufacturer Part#: |
2SD2012 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS NPN 60V 3A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Throu... |
| DataSheet: | 2SD2012 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
| Power - Max: | 25W |
| Frequency - Transition: | 3MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Base Part Number: | 2SD2012 |
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The 2SD2012 is a single bipolar junction transistor (BJT) that is manufactured and sold by various semiconductor companies. It is commonly used as a driver for power (DC) or mixed-signal applications.
This BJT is based on a planar mesoscience process, which makes it simpler and easier to integrate into different types of circuits. As such, it is commonly used in a variety of circuits, such as those used in power supplies, power amplifiers, analog and digital signal processing, and so on.
The 2SD2012 features an emitter-base voltage rating of 3 V, and a current gain (hFE) of up to 1600. Its maximum power dissipation is 450 mW at 25 C. In addition, it has an operating temperature range of -55 C to +150 C.
The 2SD2012 is also designed to operate in a wide range of current flows, with a maximum DC current flowing through the device of 2A. Its peak repetitive inverse voltage (PIV) rating is 40V, which makes it suitable for use in applications exposed to high voltages.
In terms of its working principle, the BJT works by modulation the current between its collector and emitter end. As the base voltage increases, the collector current increases, and vice-versa. This change in current between the collector and emitter is due to the presence of a small electric field set up by the base-emitter voltage, known as the “Early effect” or “Early voltage”.
The 2SD2012 is a popular choice for power circuits due to its high current gain, which allows it to serve as an effective current amplifier. This means that it can be used to amplify the current in power-up circuits, allowing them to deliver higher currents when needed. Due to its high current gain, it is also often used in applications that require higher levels of stability, such as those exposed to high temperatures or radiation.
In addition to its use in power circuits, the 2SD2012 is also used in audio and signal processing circuits, as it is able to amplify small electrical signals, allowing them to be processed more effectively. This makes it ideal for applications that require precise audio signal processing and amplification of signals with low noise levels.
Overall, the 2SD2012 is an effective and reliable single BJT that can be used in a wide range of power and signal processing applications. Its wide operating temperature range, high current gain, and good noise tolerance make it an ideal choice for any circuit that needs to deliver high levels of reliability, performance, and stability.
The specific data is subject to PDF, and the above content is for reference
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2SD2012 Datasheet/PDF