Allicdata Part #: | 2SD2017-ND |
Manufacturer Part#: |
2SD2017 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | TRANS NPN DARL 250V 6A TO220F |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 250V 6A ... |
DataSheet: | 2SD2017 Datasheet/PDF |
Quantity: | 3325 |
1 +: | $ 1.17180 |
10 +: | $ 1.05588 |
25 +: | $ 0.94273 |
100 +: | $ 0.84836 |
250 +: | $ 0.75411 |
500 +: | $ 0.65985 |
1000 +: | $ 0.54673 |
2500 +: | $ 0.50903 |
5000 +: | $ 0.50274 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 2mA, 2A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 2A, 2V |
Power - Max: | 35W |
Frequency - Transition: | 20MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
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A 2SD2017 application field and the working principle of a single bipolar junction transistor (BJT) form the foundation for modern electronics. This transistor type is used in a variety of electronic circuits, from high frequency switching and amplifiers to high power application such as motor control and power supplies. The 2SD2017 was introduced by Hitachi Semiconductor in 1975 and has become a standard component type for many electronic designs.
A BJT consists of three layers of semiconductor material which are joined together. These layers are labeled base, collector and emitter regions. A single BJT is formed with a P-type base connected between two N-type regions, the emitter and the collector. At the center of the transistor, the base region has the largest forward bias of the three layers. This means that it is more likely than either the emitter or collector to allow electrons to flow through it.
The working principle of a BJT is based on the concept of a current flow between the emitter and collector regions of the transistor, with the base region acting as a controlling factor. This current is known as the collector current (IC). When a positive voltage is applied to the base, the current that flows from the collector to the emitter region is increased. This increase in current is proportional to the amount of voltage applied. By varying the voltage and current at the base, we can also vary the current at the collector, allowing us to control the signal passed through it.
A 2SD2017 is used for a variety of electronic circuits. It is often used as an amplifier, allowing a signal to be increased or decreased depending on the input voltage. It can also be used as a switch, turning a circuit on & off with the application of current. It is also used extensively in power circuits, allowing it to control the amount of current used. The 2SD2017 has a maximum collector current of 1.2A and a maximum junction temperature of 150°C, making it suitable for many applications.
As well as being used in many circuit applications, the 2SD2017 also has a wide range of uses in the medical field. It is commonly used in medical imaging systems such as x-rays and CT scans. It can also be used for powering implantable medical devices such as pacemakers, which require a high degree of precision and reliability.
The 2SD2017 has become a popular choice for many electronic designs due to its versatility and reliability. With its wide range of application areas, from power and high frequency switching to medical imaging, it has become a standard component in many circuits.
The specific data is subject to PDF, and the above content is for reference
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