Allicdata Part #: | 2SD2206(TE6FM)-ND |
Manufacturer Part#: |
2SD2206(TE6,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 2A 100V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW ... |
DataSheet: | 2SD2206(TE6,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SD2206(TE6,F,M) is a transistor belonging to the Single Bipolar Junction Transistor (BJT) family of transistors. It is a type of two-lead transistor that has two active regions that are separated by a thin insulating layer. This family of transistors includes BJT and PNP transistor types.2SD2206 is known to have very low power dissipation and provide excellent DC performance.They are also commonly used in mobile and industrial applications.
The 2SD2206(TE6,F,M) is a NPN transistor with a high collector - emitter voltage rating of 800V and is used in applications requiring a wide range of operating temperature ranges. It has a low saturation voltage and a high current gain. It is capable of operating at frequencies up to 250kHz, making it a suitable choice for AC amplifier and switching applications. These transistors are used in consumer electronics, automotive, and industrial automation applications in which low-power switching and amplification are required.
The working principle of a 2SD2206(TE6,F,M) is based on the design of a bipolar junction transistor (BJT). A BJT consists of three regions such as an emitter, base, and collector. It acts as a current-controlled switch where the current flow from the collector to the emitter is determined by the amount of current flowing through the base. In other words, when a small current is applied to the base, the larger current flows from the collector to the emitter, switching the transistor on.
The 2SD2206(TE6,F,M) is employed in various demanding applications such as switching regulators, DC motor control, power factor correction, power switching, and instrumentation. It can also be used in applications that require high frequency switching and amplification, such as audio amplifiers. This transistor can also be found in some industrial applications, such as controlling electric motors and in low-power signal amplification applications. It also has a high power dissipation rating, meaning it can handle large amounts of power.
The main feature that makes the 2SD2206(TE6,F,M) a suitable option for many applications is its super high-speed switching capability. When the transistor is switched on, it can quickly turn on and off, giving it high switching speeds. This makes it a suitable choice for applications requiring rapid switching. Additionally, it also has low static power consumption, meaning it is an energy-efficient option.
Overall, the 2SD2206(TE6,F,M) is an invaluable and versatile transistor due to its high switching speed and low power consumption. It is a cost-effective and reliable solution for various demanding applications requiring high frequency switching and low voltage amplification, making it desirable and suitable for a broad range of control, amplifying, and switching applications.
The specific data is subject to PDF, and the above content is for reference
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