2SD2318TLU Allicdata Electronics
Allicdata Part #:

2SD2318TLUTR-ND

Manufacturer Part#:

2SD2318TLU

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 60V 3A SOT-428
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 50MHz 15W Surf...
DataSheet: 2SD2318TLU datasheet2SD2318TLU Datasheet/PDF
Quantity: 1000
2500 +: $ 0.27320
5000 +: $ 0.26019
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 560 @ 500mA, 4V
Power - Max: 15W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SD2318
Description

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2SD2318TLU is classified as a Single Bipolar Junction Transistor (BJT). It is primarily used for switching and amplification of electronic signals. This transistor\'s applications include power supply, switching, amplifier circuits, automatic guiters and audio amplifiers. Additionally, it can be utilized for general purpose switching or amplifying purposes in various circuits.

The 2SD2318TLU is a junction transistor with three terminals. These terminals are the base (B), collector (C) and emitter (E). This type of transistor has two junctions between the base and collector, and the base and emitter. The junction between the base and collector is called the base-collector junction and the junction between the base and emitter is called the base-emitter junction. Inside the transistor, the base acts as an anode while the emitter acts as a cathode.

The working principle of the 2SD2318TLU involves the base-emitter junction becoming forward-biased when a small current enters the base. This forward bias causes electrons to be attracted from the emitter to the base and holes to be attracted from the base to the emitter. This effect is known as the transistor\'s internal current gain or β. When the collector current exceeds the base current, one of the 2SD2318TLU\'s main features is that it can amplify the signal. This amplification is known as the transistor\'s current gain.

The 2SD2318TLU is commonly used in low-level switching and amplifier circuits. It is capable of amplifying the signal it receives from the base to the collector. Additionally, it can be used for signal switching for radio frequency applications and audio amplifying applications.

The 2SD2318TLU is a great choice for any circuit application that requires switching or amplification. It is reliable, easy to use and can be used in a variety of circuit applications.

The specific data is subject to PDF, and the above content is for reference

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