Allicdata Part #: | 2SD2561-ND |
Manufacturer Part#: |
2SD2561 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | TRANS NPN DARL 150V 17A MT200 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 150V 17A... |
DataSheet: | 2SD2561 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 17A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 10mA, 10A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5000 @ 10A, 4V |
Power - Max: | 200W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-ESIP |
Supplier Device Package: | MT-200 |
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The 2SD2561 is a Silicon NPN power transistor designed for use in high voltage, high speed switching applications. It is designed to offer excellent switching characteristics, low saturation voltage, and good thermal stability.
The list of applications for the 2SD2561 includes but is not limited to: switcher power supplies, automotive applications, backlighting for LCD displays, deflection circuits for TVs, motor drivers, high-speed switching for logic circuits, and high-current circuits for automotive or industrial applications.
The 2SD2561 is part of a family of similar devices with high current gain, high collector-to-emitter breakdown voltage, low saturation voltage, and excellent thermal stability. These features make it ideal for high voltage and high speed switching applications.
The 2SD2561 can be used in a variety of circuits as a switch, an amplifier, and a current regulator. When used as a switch, the device can control the flow of electric current between its collector and emitter terminals. When used as an amplifier, the device can amplify an input signal and generate an output signal. When used as a current regulator, the device can regulate the amount of current flowing through it.
The working principle of the 2SD2561 is based on the polarization of its base-to-emitter junction. When a positive voltage is applied to the base terminal, it creates an electric field, which causes the electrons and holes to concentrations in the base region, creating a colleciton to current. This current reduces as the voltage applied to the base terminal decreases, and increases as the voltage increases. This, then, forms the basic working principle of the 2SD2561, which is to regulate the amount of current flowing through it by controlling the base voltage.
The 2SD2561 consists of two transistors connected in a common emitter configuration. It has a collector current of up to 3A, a collector-emitter voltage of up to 500V, and a frequency range of up to 250MHz. It is also capable of operating up to 175°C. These specifications make it an ideal choice for high-speed, high-voltage switching applications.
The 2SD2561 is also designed to generate minimal oscillations and other unwanted noise, which can be a concern in high frequency switching applications. This is made possible by its low ON resistance, which reduces the amount of internal noise generated by the device.
In summary, the 2SD2561 is a versatile power transistor for high voltage and high speed switching applications. It is designed to offer excellent switching characteristics, low saturation voltage, and good thermal stability. The device is ideal for use in switcher power supplies, automotive applications, backlighting for LCD displays, deflection circuits for TVs, motor drivers, high-speed switching for logic circuits, and high-current circuits for automotive or industrial applications. It works by controlling the amount of current flowing through it by varying the base voltage, and it is designed to generate minimal oscillations and other unwanted noise.
The specific data is subject to PDF, and the above content is for reference
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