Allicdata Part #: | 2SD2641-ND |
Manufacturer Part#: |
2SD2641 |
Price: | $ 1.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | TRANS NPN DARL 110V 6A TO3P |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 110V 6A ... |
DataSheet: | 2SD2641 Datasheet/PDF |
Quantity: | 244 |
1 +: | $ 1.35450 |
10 +: | $ 1.22220 |
25 +: | $ 1.09141 |
100 +: | $ 0.98236 |
250 +: | $ 0.87318 |
500 +: | $ 0.76404 |
1000 +: | $ 0.63306 |
2500 +: | $ 0.58940 |
5000 +: | $ 0.58212 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 110V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 5mA, 5A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5000 @ 5A, 4V |
Power - Max: | 60W |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
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2SD2641 is a single-type bipolar junction transistors (BJTs) with high power dissipation. It features high gain, low collector–emitter saturation voltage, low collector–base saturation voltage, very high transition frequency and excellent thermal stability. It can be used in a variety of applications, such as audio power amplification, general purpose switching and recording circuits. This article will discuss the applications, working principle and features of 2SD2641.
Applications
2SD2641 BJTs have a wide range of applications. The most common application is audio power amplification. It is suitable for use in subwoofer amplifiers, sound mixers, karaoke machines and loud speakers. It is also suitable for Class B and Class AB audio amplifiers. This transistor can also be used in general purpose switching and recording circuits. For example, it can be used as a switching element for DC and AC circuits, as well as for data recording and control signals. 2SD2641 BJTs can also be used in applications such as motor drives, relay drivers and solenoid drivers.
Working Principle
A BJT consists of three semiconductor layers, typically made of silicon, sandwiched between two metal electrodes. When an electrical current passes through the device, it creates an electric field between the collector and the base. This electrical field can control the flow of current from the collector to the emitter or from the base to the emitter. 2SD2641 BJTs have a single base-emitter junction. When a voltage is applied to the base electrode, the majority carriers (electrons or holes) in the base layer diffuse across the emitter-base junction and are injected into the emitter layer. This creates a small electric current between the collector and the emitter, which controls the current flow between collector and emitter.
Features
2SD2641 BJTs are designed for high-power applications. The device has a high power dissipation rating of up to 20W, which allows it to handle large amounts of current. It also features high gain, which is typically 35 at 10mA collector current. The device has a low collector–emitter saturation voltage and a low collector–base saturation voltage of 1V and 2.8V, respectively. 2SD2641 BJTs have a very high transition frequency of up to 300MHz. Lastly, the device has excellent thermal stability, which ensures the BJTs can withstand high temperatures without degradation.
In summary, 2SD2641 is a single-type bipolar junction transistor (BJT) with high power dissipation. It is suitable for use in a variety of applications, such as audio power amplification, general purpose switching and recording circuits. This device has a variety of features, including high gain, low collector–emitter saturation voltage, low collector–base saturation voltage, very high transition frequency and excellent thermal stability.
The specific data is subject to PDF, and the above content is for reference
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