Allicdata Part #: | 1014-1001-ND |
Manufacturer Part#: |
ALD1101ASAL |
Price: | $ 5.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD1101ASAL Datasheet/PDF |
Quantity: | 210 |
1 +: | $ 4.58640 |
10 +: | $ 4.09374 |
100 +: | $ 3.35664 |
500 +: | $ 2.71804 |
1000 +: | $ 2.29232 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 75 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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An ALD1101ASAL is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor) array. This type of array is a subset of a power MOSFET and contains two power MOSFET transistors in a single package.
The ALD1101ASAL offers an efficient, cost-effective solution for high-power switching applications. Each device within the array can be used as either a p-type or n-type transistor. As a result, this type of array may use fewer components than other types of power MOSFETs, resulting in reduced space and power consumption.
The ALD1101ASAL is well-suited for automotive and industrial applications. Its switching frequency of up to 300 MHz makes it ideal for high-power switch controls and motor drives. The device has a low on-resistance of 3.2 ohms, making it well-suited for flyback DC-DC converters and current-fed synchronous buck converters.
The ALD1101ASAL has a simple working principle. It uses an internal switch, known as a gate, to control the flow of electrons through the active area of the MOSFET. The gate is controlled by applying a voltage between the gate and the source (electron source) of the transistor. The resulting current is proportional to the gate voltage. The gate voltage, in turn, controls the current flow through the MOSFET.
The ALD1101ASAL is used in a variety of applications, such as motor control, pulse power, high-speed switching regulators, power buffers, and power supplies. It can deliver high switching speed, high frequency control, high current capacity, and low on-resistance. As a result, it is ideal for a wide range of demanding switching applications.
In summary, the ALD1101ASAL is a power MOSFET array that offers an efficient, cost-effective solution for high-power switching applications. It is well-suited for automotive and industrial applications and has a switching frequency of up to 300 MHz. Additionally, it has a low on-resistance of 3.2 ohms, making it well-suited for flyback DC-DC converters and current-fed synchronous buck converters. The device’s simple working principle uses an internal switch, known as a gate, to control the flow of electrons through the active area of the MOSFET. As a result, it is ideal for a wide range of demanding switching applications.
The specific data is subject to PDF, and the above content is for reference
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