Allicdata Part #: | 1014-1003-ND |
Manufacturer Part#: |
ALD1101SAL |
Price: | $ 3.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD1101SAL Datasheet/PDF |
Quantity: | 149 |
1 +: | $ 3.00510 |
10 +: | $ 2.68065 |
100 +: | $ 2.19813 |
500 +: | $ 1.77995 |
1000 +: | $ 1.50116 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 75 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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ALD1101SAL is a family of transistor array devices manufactured by Allegro Microsystems. It is a dual N-channel MOSFET array which provides two independent low on-resistance N-channel MOSFETs in a single package. The device is designed to be used in high frequency switching applications such as in switching power supplies, motor drivers and DC-DC converters. It is also used for load switched applications and for EMI mitigation.
The main purpose of the ALD1101SAL is to provide two high-power N-channel MOSFETs in a compact package that can be easily soldered onto a circuit board. It has an on-resistance of 140 mΩ which is suitable for switching loads up to 35 A at a maximum voltage of 30 V. The mounting footprint is only 6.3mm by 3.7mm. The device also has built-in protection features such as reverse diode, current limit, and thermal protection.
In addition to its small size, the ALD1101SAL provides several features that make it ideal for switching power applications. The device integrates two separate N-channel MOSFETs in a single package, which makes it easy to switch both the high-side and low-side transistors with a single device. This reduces the number of components needed, thereby reducing the overall system cost. It also has an integrated reverse diode protection feature which prevents reverse current from flowing during switching, enabling fast and reliable circuit operations.
The ALD1101SAL is designed to be used in a variety of applications from the automotive, industrial control and communications industries. It is primarily used in applications that require high switching speeds and high current outputs. These include motor drivers for automotive and industrial applications, DC-DC converters, Power Factor Correction (PFC) circuits, EMI suppression circuits and load switch circuits.
The ALD1101SAL uses two transistors with two gate terminals. When a logic signal is applied to the gate of the first transistor, it turns on and the second transistor is turned off, allowing current to flow. When the signal is reversed, the second transistor is switched on and the first transistor is off, and the current flow is reversed. This switching action can be used to switch high levels of current at high frequencies.
The ALD1101SAL is a highly reliable device, as it has a built-in ESD protection circuit which prevents damage to the device from static electricity. It also has integrated current limit and thermal protection features which ensure that the device is operated within safe parameters.
In summary, the ALD1101SAL is a dual N-channel MOSFET array manufactured by Allegro Microsystems. It is designed to provide two high-power N-channel MOSFETs in a small package and to be used in high frequency switching applications. The device has an on-resistance of 140 mΩ and a mounting footprint of 6.3mm by 3.7mm. It also has integrated current limit, reverse diode and thermal protection features for added protection and reliability. Its main applications are in motor drivers, DC-DC converters, PFC circuits and load switch circuits, among others.
The specific data is subject to PDF, and the above content is for reference
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