Allicdata Part #: | 1014-1010-ND |
Manufacturer Part#: |
ALD1105PBL |
Price: | $ 2.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N/2P-CH 10.6V 14DIP |
More Detail: | Mosfet Array 2 N and 2 P-Channel Matched Pair 10.6... |
DataSheet: | ALD1105PBL Datasheet/PDF |
Quantity: | 454 |
1 +: | $ 2.17350 |
10 +: | $ 1.93788 |
100 +: | $ 1.58918 |
500 +: | $ 1.28687 |
1000 +: | $ 1.08530 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N and 2 P-Channel Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | 14-PDIP |
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The ALD1105PBL is an array of five alpha MOSFETs that are highlighted for their use in applications like audio and switching. These devices are especially suitable for use in high voltage, high current, and high frequency applications thanks to their low RDS(on), low input capacitance, and exceptionally low gate charge. In addition to its low power consumption, the ALD1105PBL is also relatively simple to use and can work at frequencies as high as 500 MHz.
The ALD1105PBL is available in an SOIC-14 package, which allows for easy installation and testing. The drain, source and gate pins of each MOSFET are labeled, making it easy to distinguish each one from the other when needed.
The alpha MOSFETs in the ALD1105PBL are commonly used in applications requiring high voltage, high current and good stability throughout the switching process. These devices are an ideal solution for situations like motor control, air conditioners, automotive electronics and even LED lighting solutions. Additionally, they can be used to reduce the power consumption of electrical components, such as transistors, chips, and circuits.
The use of alpha MOSFETs ensures improved performance in areas like switching time and frequency, power loss, and noise reduction. Additionally, the ultra-low input capacitance of the ALD1105PBL minimizes distortion, allowing the user to more accurately reproduce the characteristics of their input signal. As well as this, they are capable of withstanding higher pulse current and higher junction temperature, which makes them an ideal choice for a wide variety of applications.
The ALD1105PBL is based on the principle of low-voltage polysilicon FET technology, which ensures reliable operation throughout the range of operating voltages. This technology improves the thermal immunity of the whole device, thus making it stable and robust. Additionally, its low gate charge, low input capacitance, low RDS(on) and better frequency performance make the ALD1105PBL an excellent choice for a wide variety of applications.
In summary, the ALD1105PBL is an array of alpha MOSFETs that are highlighted for their use in high voltage, large current, and high frequency applications. This device exhibits excellent performance in areas such as switching time and frequency, power loss and noise reduction, as well as its ability to withstand higher pulse currents and higher junction temperatures. Furthermore, its low-voltage polysilicon FET technology makes it a reliable, stable and robust solution that is suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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