Allicdata Part #: | 1014-1016-ND |
Manufacturer Part#: |
ALD110800APCL |
Price: | $ 3.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 16DIP |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 500m... |
DataSheet: | ALD110800APCL Datasheet/PDF |
Quantity: | 9 |
1 +: | $ 3.47130 |
10 +: | $ 3.09708 |
100 +: | $ 2.53972 |
500 +: | $ 2.05657 |
1000 +: | $ 1.73445 |
Series: | EPAD®, Zero Threshold™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 4V |
Vgs(th) (Max) @ Id: | 10mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 16-DIP (0.300", 7.62mm) |
Supplier Device Package: | 16-PDIP |
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The ALD110800APCL is a FET array that contains 8 N-Channel field-effect transistors. It consists of two 4-channel source and drain connected FETs in which the dual polem structure is utilized from the performance point of view. The entire array is rated for 5V and has a maximum drain-source voltage of 200V. The drain current rating for each FET is 4 mA.
Instance of FET array, the ALD110800APCL, has numerous applications. For example, it can be used to provide signal multiplexing and demultiplexing in audio systems. It is also used for signal routing and switching in power and industrial automation systems. Furthermore, it can be applied to develop signal amplification and conditioning circuits. Additionally, this FET array is also used in medical electronic equipment, automotive electronics, and other microcontroller-based projects.
The working principle of the ALD110800APCL is based on the behavior of its 8 FETs. The configuration of the FETs is such that each has independent source and drain connections. Thus, each FET has an independent threshold switch which is used to turn on and off the individual FETs. Accordingly, this will determine how much current the FETs will draw from the external power source. Depending on the operation of each individual FET, the overall current consumed by the entire array can be controlled and regulated.
In order to operate the ALD110800APCL, the supply voltage must be applied to the drain and the gate-source voltage must be applied to the pair of inputs. By changing the gate-source voltage, the corresponding FET’s internal drain current and drain-source voltage can be adjusted. Thus, the user can easily control the total current drawn by the array. In this way, the ALD110800APCL can be used to regulate the power flow and to ensure efficient operation of the connected load and equipment.
Apart from providing efficient current control, the performance of the ALD110800APCL can also be improved by mounting it on an appropriate Printed-Circuit Board (PCB). This will help to reduce and minimize the effects of temperature variations, vibrations, and other external influences. Additionally, mounts and other essential components can also be included on the PCB for better shielding.
In conclusion, the ALD110800APCL is a FET array that offers improved features over conventional single FETs. It can provide optimum current regulation that can be used to increase the efficiency of applications dealing with signal multiplexing, signal routing, power control, and other related fields. Furthermore, by mounting the FET array on an appropriate PCB, the performance of this array can be further improved.
The specific data is subject to PDF, and the above content is for reference
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