ALD114935SAL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ALD114935SAL is the designation of an array of N-Channel MOSFETs. Generally, there are two types of transistors in electronics, Bipolar Junction Transistor (BJT) and Field Effect Transistor (FET). This MOSFET is a type of FET, and the specific category it belongs to is the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Arrays containing multiple MOSFETs, such as the ALD114935SAL, are often used in electronics to increase the number of devices available in a single package, as well as to reduce the cost and size of the design.

The ALD114935SAL array consists of thirty-five N-Channel MOSFETs in each of the two packages. Each MOSFET in the array has a drain current rating of 1.25A, a drain source voltage of 30V, and an on resistance of 0.25Ohm. The array also offers fast switching times with a gate-source turn-off time being in the 200ns range and a gate-source turn-on time in the 10ns range.

Because of its characteristics, the ALD114935SAL is mainly used in power management applications, such as battery and power supply designs. These arrays are used to switch large currents in a short amount of time, allowing for efficient control of power consumption in the circuit. This can be applied to designs such as AC/DC or DC/DC converters, as well as portable and automotive power systems. Furthermore, these arrays can be used to control applications such as motor control and audio amplifiers, since they are able to handle high currents without much power loss.

The ALD114935SAL and similar arrays utilize a common source architecture which is the most common among MOSFETs. In this architecture, the source, drain and gate pins of the MOSFET are connected to each other in a triangle pattern. This connection allows the MOSFET to either conduct current or resist it, depending on the voltage differences between these pins. When the voltage differences are positive, the MOSFET is said to be in a forward bias, and it will conduct current. When the voltage differences are negative, the MOSFET is said to be in a reverse bias, and it will resist current.

Furthermore, the array utilizes internal body diodes for protection. These diodes are connected between the drain and the source pins. When the voltage differences are positive, the body diode will forward bias and allow current to flow from the source to the drain. When the voltage differences are negative, the body diode will reverse bias and prevent current from flowing between the source and the drain. This mechanism helps to protect the MOSFETs from reverse currents which may otherwise damage them.

In conclusion, the ALD114935SAL array is a type of N-Channel MOSFETs in a common source architecture which is mainly used in power management applications to switch large currents in a short amount of time. Its internal body diodes provide protection against reverse currents, allowing it to be used in various applications.

The specific data is subject to PDF, and the above content is for reference