AO4202 Allicdata Electronics

AO4202 Discrete Semiconductor Products

Allicdata Part #:

785-1282-2-ND

Manufacturer Part#:

AO4202

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 19A 8SOIC
More Detail: N-Channel 30V 19A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4202 datasheetAO4202 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AO4202 Application Field and Working Principle
AO4202 is a n-type metal-oxide-semiconductor field-effect-transistor (MOSFET). It is a high performance and ultra-low-capacitance n-channel enhancement MOSFET designed for use in high-speed switching applications such as chargers, power amplifiers, and audio amplifiers. MOSFET transistors are advantageous over bipolar junction transistors in that they offer higher current gain and lower power dissipation while eliminating the effects of thermal runaway. In comparison to conventional MOSFETs, the AO4202 offers a much improved current-handling ability, which can be beneficial in situations where high amounts of current are needed. Its ultra-low capacitance also makes it ideal for use in next-generation high-speed circuits.

The AO4202 is a single-channel MOSFET that is specific to n-type materials. This type of transistor works by creating an electric field between the source and drain, which is then regulated by the gate voltage. When a positive voltage is applied to the gate, a thin n-type layer is formed in the source and drain, which will allow current to flow from the source to the drain. This process is known as an Enhancement-Mode MOSFET (EMOSFET). Conversely, when a negative voltage is applied to the gate, the electric field is weakened, and current is prevented from flowing from the source to the drain. This process is known as a Depletion-Mode MOSFET (DMOSFET).

The AO4202 has a wide range of applications in modern electronic devices. It can be found in circuits such as charging systems, power amplifiers, and audio amplifiers, which all require high amounts of current and speed. This MOSFET is also able to handle transient voltage spikes, and its gate capacitance is lower than conventional MOSFETs, making it more suitable for use in high-speed circuits. Finally, its low on-resistance also makes it ideal for power management in devices that require a high level of efficiency.

In conclusion, the AO4202 is a single-channel MOSFET designed for use in high-speed applications. It offers a much improved current-handling ability, ultra-low capacitance, and high efficiency, making it ideal for use in charging systems, power amplifiers, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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