AO4264E

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AO4264E is a N-Channel MOSFET, which is a type of field-effect transistor (FET). It is designed and developed by Alpha & Omega Semiconductor, Inc. It has the highest efficiency rating compared to all other FETs available on the market. The AO4264E is a commonly used FET for its capacity for low on-state resistance and fast switching times.

In terms of application fields, the AO4264E is mainly used in DC-DC conversion, power management, gaming peripherals and motor control circuits. The AO4264E is also ideal for switching systems, voltage boosting applications and battery operated electronics.

The AO4264E has a maximum drain source voltage of 30V, a maximum drain current of 10A, a maximum drain power dissipation of 250W and a gate source voltage of -2V to 10V. The AO4264E is available in SOP-8 and DPAK-8 packages.

The working principle of the AO4264E MOSFET is based on the field-effect principle. This means that the control of the current through the device is from the gate terminal. The gate terminal is an insulated electrode and a voltage change at the gate terminal can cause the change of the between the drain and source terminals. Based on the nature of the device, MOSFETs experience either depletion or enhancement modes and the AO4264E is in the depletion mode.

When the drain-source voltage is below the gate threshold voltage, the current between the source and drain terminals is off, meaning no current flows. This is known as the cut-off region. When the gate-source voltage is greater than the gate threshold voltage and the drain-source voltage is greater than VDS, the current between source and drain terminals is on and this is known as the saturation region. In this region, the drain current remains constant and is influenced by the gate voltage.

The AO4264E can be used as an electronic switch in various application areas. When a low voltage is applied to the gate terminal, the drain-source voltage and current will decrease. When the voltage increases, the drain current increases and the device will support load currents up to 10A. This makes AO4264E useful for switching between different output voltages and currents.

The AO4264E is an ideal switch for voltage boosting applications due to its low on-state resistance, fast switching times and high efficiency. The AO4264E can be used for switching regulated power supply designs, battery operated electronics and integrated battery monitoring designs. The applications of the AO4264E are commonly found in gaming peripherals, personal media players and portable electronic gadgets.

In summary, the AO4264E is a N-Channel MOSFET that is commonly used in DC-DC conversion, motor control, power management and gaming peripherals. It has a maximum drain source voltage of 30V, a maximum drain current of 10A, a maximum drain power dissipation of 250W and a gate source voltage of -2V to 10V. The working principle of the AO4264E MOSFET is based on the field-effect principle where a change in the gate voltage can cause a change in the voltage between the drain and source terminals. In terms of applications, the AO4264E is useful for switching, voltage boosting and battery operated electronics. It is also one of the most efficient FETs on the market.

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