Allicdata Part #: | AO4290A-ND |
Manufacturer Part#: |
AO4290A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 15.5A 8SOIC |
More Detail: | N-Channel 100V 15.5A (Ta) 3.1W (Ta) Surface Mount ... |
DataSheet: | AO4290A Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4525pF @ 50V |
Vgs (Max): | ±20V |
Series: | AlphaSGT™ |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 15.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.5A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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AO4290A is a N-Channel enhancement mode MOSFET designed for high-frequency applications. The device has been specifically designed for low on-state resistance and high-current handling capability. The power dissipated is internally limited due to the low RDS(ON) and the self-protection features of the device. It is ideal for power switching applications such as DC-to-DC converter, relay driver, motor control and other power management applications.
AO4290A has an anode, cathode, and gate. When a positive voltage is applied to the gate relative to the cathode, the threshold voltage of the device is exceeded and the electrical current flows between the anode and the cathode. The anode is positive relative to the cathode. The anode and gate are internally connected by a diode, and a portion of the current flowing between the anode and the cathode will flow through the gate.
The drain-source voltage has a direct impact on the on-resistance of the AO4290A. The on-resistance of the device decreases as the drain-source voltage increases, which allows the device to be used for high-power switching applications. The gate-source voltage also has an influence on the on-resistance of the AO4290A, as a higher gate-source voltage increases the on-resistance.
The AO4290A protects against reverse current flow and ensures that no current flows if the gate-source voltage is below the threshold voltage. It also has an internal (fuse) breakdown voltage, which limits the drain-source voltage to the set value.
The AO4290A can be used in a wide variety of applications such as motor control, DC DC converters, power management, low power consumption and low output impedance. It is also used in a wide range of consumer electronics, so they can be found in computers, monitors and cell phones. The device is also used in wireless applications such as wireless LANs and Bluetooth.
In summary, the AO4290A is a N-Channel enhancement mode MOSFET designed for high-frequency applications. It is ideal for power switching applications such as DC-to-DC converter, relay driver and motor control. The device has an anode, cathode and gate, and when a positive voltage is applied to the gate relative to the cathode, the threshold voltage of the device is exceeded and the electrical current flows between the anode and the cathode. The on-resistance of the device decreases as the drain-source voltage increases and the gate-source voltage has an influence on the on-resistance. The device also has internal protection features such as reverse current blocking and an internal breakdown voltage limit. The device is used in a wide variety of applications, including consumer electronics and wireless applications.
The specific data is subject to PDF, and the above content is for reference
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