AO4264 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AO4264 High-Voltage N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is an integrated circuit device designed to provide efficient, cost-effective power solutions for high voltage, medium current applications such as industrial power supplies, LED lighting, automotive electronics and telecom and datacom systems. It is a single N-Channel MOSFET also known as an enhancement mode MOSFET. The device features breakdown voltages of 200V, 250V, 400V and 500V; gate thresholds of 2.5V, 4V and 5V; and maximum drain-source capacitances of 4.2 nC, 7 nC, 10 nC and 15 nC, respectively. The AO4264 was designed to provide a superior power switching performance while providing a low static input power and a low power loss during operation.

The main application fields of the AO4264 include industrial power supplies, LED lighting, automotive electronics, telecom and datacom systems due to its superior power switching performance delivered with a low static input power and a low power loss during operation. The high-voltage MOSFET offers high efficiency and low power consumption due to its low total gate charge, which is ideal for current-mode high voltage power management design, power switching and field control applications. Its high junction temperature rating, Anti-fusing technology and high energy handling capabilities make the AO4264 a good choice for high reliability power management solutions.

The working principle of the AO4264 high-voltage MOSFET is that it is a voltage-controlled device, meaning that it is activated or deactivated by applying or removing a voltage to its gate terminal. This voltage creates a field that attracts or repels electrons in the channel between the source and drain, thereby controlling the current flow through the device. When the AO4264 is “on”, it has a high level of conductivity, allowing current to flow. When the device is “off”, it has a low level of conductivity and does not allow current to flow. This makes the AO4264 suitable for switching applications, where it can be used to turn devices or circuit elements on or off. The AO4264 is an enhancement mode MOSFET, meaning that it activates when a voltage is applied to the gate, and does not require a negative gate voltage for operation.

The AO4264 also features a low Rds(on), a low gate charge, a high transition frequency and a low total gate charge. The low Rds(on) provides low on-state resistance, allowing higher load current and faster switching. The low gate charge allows extraction of higher output power and faster switching. The high transition frequency allows higher power dissipation before the device heats up. Finally, the low total gate charge allows reduced input power.

Overall, the AO4264 is a high-voltage MOSFET that provides an efficient and cost-effective power solution for high voltage, medium current applications. With its integrated features such as multiple breakdown voltages, low gate charge, low Rds(on) and low total gate charge, the AO4264 can provide superior switching performance with low static input power and a low power loss during operation. The device is applicable to a variety of industrial, automotive, telecommunications and data communications applications.

The specific data is subject to PDF, and the above content is for reference