Allicdata Part #: | AO4264_101-ND |
Manufacturer Part#: |
AO4264_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CHANNEL 60V 12A 8SO |
More Detail: | N-Channel 60V 12A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | AO4264_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2007pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AO4264_101 is a high-performance N-channel, metal-oxide-semiconductor field-effect transistor (MOSFET). It is primarily used as an electronic switch, primarily in high frequency, high current applications.
The AO4264_101 is available as a TO-220 package, making it suitable for working in a variety of temperatures and applications. Its dual gate, ultra-low capacitance structure makes it ideal for high-performance switching, enabling fast switching speeds. Its smooth resistance curve allows excellent control of the electric field when driving the gate, allowing consistent switching speeds across environments.
It is commonly used for power management, particularly for the control of large devices such as electric motors. The AO4264_101 is highly efficient, providing high output power and low on-resistance. It can be used to drive large amounts of power with minimal on-state resistance.
The AO4264_101 features a non-polarity protection circuit that prevents incorrect insertion of the device and allows for reliable operation. It also includes a thermal protection circuit that is designed to protect the device from overheating in the event of an overload.
The working principle of the AO4264_101 uses a three-terminal device structure consisting of a source, drain and gate. The source and drain terminals allow electric current to flow through the MOSFET. The voltage of the gate terminal determines whether the current flows or not. When the gate terminal is at a lower voltage than the source, the device is in the “off” state, while an increase in voltage at the gate terminal causes the device to become “on”, permitting electricity to flow.
The AO4264_101 can be used in a variety of applications including power switching, DC-DC converters, motor control, power amplifiers, and motor control. The device is ideal for use in high-frequency, high-current applications due to its low capacitance and superior switch performance.
In summary, the AO4264_101 is a high-performance N-channel MOSFET that is mainly used as an electronic switch in high-frequency, high-current applications. It is available in a TO-220 package and features an ultra-low capacitance structure, providing superior switch performance and improved efficiency. Additionally, the AO4264_101 includes non-polarity protection and thermal protection circuits for reliable operation. The three-terminal device structure of the AO4264_101 permits current to flow when the voltage of the gate terminal is increased above that of the source. The device is ideal for use in power management, motor control, and other power-switching applications.
The specific data is subject to PDF, and the above content is for reference
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