AO4292E Discrete Semiconductor Products |
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Allicdata Part #: | 800-3741-2-ND |
Manufacturer Part#: |
AO4292E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 8A 8SOIC |
More Detail: | Surface Mount 8-SOIC |
DataSheet: | AO4292E Datasheet/PDF |
Quantity: | 1000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The AO4292E is a single N-channel enhancement-mode MOSFET developed by Alpha and Omega Semiconductor which offers a wide range of features, high performance and reliability. It has become a popular choice among electronics engineers and is widely used in Embedded Systems applications. The AO4292E is characterized by low on-state resistance, low power consumption, low threshold voltage and low drain to source leakage current.
The AO4292E is a power MOSFET with a single N-channel. It operates in the enhancement-mode and has an on-state resistance of 1.0Ω at a drain-source voltage of 10V. The maximum drain current is limited to 2.5A which is sufficient for many medium to high power applications. The device is also designed for high frequency switching and can handle frequencies of up to 20MHz in pulsed mode or 1MHz in continuous mode.
The AO4292E is mainly used in power supply and DC-DC converter applications, due to its low on-state resistance, low power consumption and low threshold voltage. The MOSFET is also used in AC-DC SMPS applications and can handle high-frequency switching at a power level of up to 150W. Additionally, it can also be used in a number of different automotive applications ranging from engine controllers to fuel injection control systems.
The AO4292E’s working principle is based on the principle of a voltage-controlled current source. When a positive voltage is applied to the Gate, it results in an increase in the current flowing through the Drain-Source. This current flows mainly through the body diode. Drain to source current conduction is reduced as the Gate voltage is increased and is eventually fully inhibited when the Gate to Source voltage exceeds a certain threshold. During this process, the MOSFET acts as a high-impedance component that limits the flow of current from the Source to the Drain.
The AO4292E is also characterized by its low capacitance and low output capacitance, which results in a high-speed switching performance. Additionally, the device also features a low gate charge which reduces gate driving power dissipation and increases power efficiency. The device also has a high breakdown voltage and a low input capacitance, making it suitable for high-voltage applications. Furthermore, the device also has a built-in overvoltage protection mechanism, which reduces the risk of damage due to high voltage transients.
The AO4292E is a highly reliable and versatile MOSFET which is designed for use in a variety of applications including power supplies, DC-DC converters, automotive applications, AC-DC SMPS, and high-frequency switching. It is characterized by low on-state resistance, low power consumption, low threshold voltage, low drain to source leakage current, low capacitance, high breakdown voltage, and low input capacitance. The working principle of the AO4292E is based on the principle of a voltage-controlled current source. It is an ideal choice for medium to high power applications requiring high-frequency switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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