AO4812L

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The AO4812L is an integrated N-Channel MOSFET array that is comprised of two high-performance N-Channel MOSFETs optimized to improve the overall system performance. This device features high on-resistance, low input capacitance, and tight parameter distribution. The AO4812L is designed to utilize fewer components, reducing board space and assembly time while delivering improved system performance.

Application Fields of AO4812L

The AO4812L is primarily used in low-input current, low-side MOSFET arrays, especially for driving large-capacitive and inductive loads like automotive relays, motors, solenoids, and high-voltage lamps. It is compatible with low-voltage and medium-voltage supply systems used in automotive and industrial applications. Since it offers a lower on-resistance than other solutions, it’s able to drive bigger loads with a modest input current. It is also used for low-saturation voltage and high-current switching applications.

Working Principle of AO4812L

The AO4812L is a dual N-Channel MOSFET array consists of two N-Channel MOSFETs connected in series with a common source. The gate of each MOSFET is controlled by an external signal. When the external gate voltage is low, the channel of each MOSFET is off, so the device will be off. When the external gate voltage is increased to the level of threshold voltage, MOSFET turns on and source current will flow.

The AO4812L offers a low Rds(on) rating and a high maximum drain current. Its switching losses are minimal, resulting in improved efficiency. Its ESD protection is rated at 8kV (HBM) for improved reliability.

Conclusion

The AO4812L is an integrated two-channel N-Channel MOSFET array that is designed to offer high-performance, low power consumption, and compact size. It is suitable for use in low-input current, low-side MOSFET arrays and is suitable for use in automotive and industrial applications. It offers a low Rds(on) rating, high maximum drain current, and improved ESD ratings.

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