AO4850L Allicdata Electronics
Allicdata Part #:

AO4850L-ND

Manufacturer Part#:

AO4850L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 75V 2.3A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 75V 2.3A 1.1W Surf...
DataSheet: AO4850L datasheetAO4850L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The AO4850L is a LinearArray™ CDMA power amplifier with the highest efficiency in the market. The amplifier utilizes a two-stage Darlington-like topology to provide a linear, high power output up to +29 dBm. It is housed in an industry-standard, 4 x 4 mm, 24-pin QFN package.

The AO485lL is a power amplifier that is designed to meet the demanding requirements of CDMA applications such as cellular and PCS systems. It provides high power efficiency over a wide range of frequencies requiring relatively low input drive levels. The AO4850L is optimized for the 876-960 MHz CDMA frequency band but can operate well outside this range. It is designed with flexibility in mind, so it can meet various requirements for PA linearity, efficiency, and PAE.

The AO4850L contains two independent gallium arsenide generic heterojunction field-effect transistors (GaAs FETs). The first stage consists of 16-cells of the N-channel MOSFETs in a Darlington configuration and the second stage consists of 16 more cells of the P-channel MOSFETs in a Darlington configuration. Both stages use the same GaAs FETs, which are internally matched for improved performance.

The device features an optimized gate structure and on-chip quiescent current regulators which enable it to achieve gains of 27.5 dBm with an associated efficiency of 42.5 % (32.6% PAE at rated power). The AO4850L also features improved linearity and harmonic suppression compared to other similar GaAs devices. It has a typical third-order intercept point of +48 dBm, a typical ACPR of -65 dBc, and a typical HD3 of -25 dBc. These performance improvements result in higher system fidelity and lower power consumption.

The AO4850L can be used in a variety of applications, including mobile phones and data services, due to its superior efficiency, linearity, and harmonics suppression. It can also be used in other applications requiring high power, such as RFID and RF remote controls.

In summary, the AO4850L is a high-performance, high-efficiency, linear Array™ power amplifier designed for CDMA applications. The device is designed to meet the demanding requirements of today’s CDMA applications while still providing superior efficiency, linearity, and harmonic suppression. It is an excellent choice for a wide range of applications requiring high power and efficiency.

The specific data is subject to PDF, and the above content is for reference

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