AO4840E

Series:	AlphaMOS
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Rds On (Max) @ Id, Vgs:	28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	520pF @ 20V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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AO4840E is an array of Logic level N-channel enhancement mode vertical DMOS transistors developed by Alpha and Omega. This product is designed specifically to meet the demanding requirements of low voltage, high speed switching applications. It has an extremely low ON-resistance and robust gate dielectric which enables fast, reliable and efficient switching.AO4840E is an array of 4 channels switch combination, each of which includes one normally-on N-channel MOSFET and one normally-off depletion-mode MOSFET. It is particularly useful for power management and motor control applications, providing the user with a single device solution for multiple switch requirements.The application fields of AO4840E microcontroller includes computers, DVD/VCR players, digital TV equipment and audio equipment. The robust gate dielectric of the device allows for fast, reliable and efficient switching. The extremely low ON-resistance of the device make it ideal for low voltage, high speed switching applications. The package of the device is designed with small surface mount leads that provide excellent thermal properties, making it suitable for high-temperature environment.The working principle of AO4840E is that when the voltage on the gate is below the breakdown voltage, the enhancement mode MOSFET (the top MOSFET of the device) is turned off and both MOSFETs in the array share the same drain-source voltage. When the voltage on the gate is above the breakdown voltage, the enhancement mode MOSFET is turned on, allowing current to flow through the channel. This enables the user to achieve a lower ON-resistance (as low as 10mΩ) compared to discrete devices with much lower power dissipation.In addition, the AO4840E is protected by an integrated thermal shutdown structure which shuts down the device if the internal temperature exceeds 125°C. The device also features a soft start which eliminates the in-rush current during startup.Overall, the AO4840E array of logic level N-channel enhancement-mode vertical DMOS transistors offers users a smaller, low-cost solution for applications which require fast, reliable, and efficient switching. Its robust gate dielectric and extremely low on-resistance makes it suitable for power management and motor control applications. Its integrated thermal protection and soft start functions also provide added protection for the device and surrounding components.

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